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FQA20N40

400V N-Channel MOSFET

Features ?19.5A,400V,RDS(on)=0.22?@VGS=10V ?Lowgatecharge(typical60nC) ?LowCrss(typical45pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQA20N40

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=19.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.22Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MGP20N40CL

SMARTDISCRETESInternallyClamped,N-ChannelIGBT

SMARTDISCRETESInternallyClamped,N-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresGate–EmitterESDprotection,Gate–CollectorovervoltageprotectionfromSMARTDISCRETES?monolithiccircuitryforusageasanIgnitionCoilDriver. ?TemperatureCompensatedGate–C

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MGP20N40CL

SMARTDISCRETESInternallyClamped,N-ChannelIGBT

SMARTDISCRETESInternallyClamped,N-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresGate–EmitterESDprotection,Gate–CollectorovervoltageprotectionfromSMARTDISCRETES?monolithiccircuitryforusageasanIgnitionCoilDriver. ?TemperatureCompensatedGate–C

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

SDM20N40A

DUALSURFACEMOUNTSCHOTTKYBARRIERDIODE

DIODES

Diodes Incorporated

SDM20N40A

DUALSURFACEMOUNTSCHOTTKYBARRIERDIODE

Features ?LowForwardVoltageDrop ?CommonAnodeConfiguration ?LeadFreeByDesign/RoHSCompliant(Note3) ?GreenDevice(Note4)

DIODES

Diodes Incorporated

SGR20N40L

Highinputimpedance

GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withatrenchgatestructureprovidesuperiorconductionandswitchingperformanceincomparisonwithtransistorshavingaplanargatestructure.Theyalsohavewidenoiseimmunity.Thesedevicesareverysuitableforstrobeapplica

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGR20N40L

GeneralDescription

GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withatrenchgatestructureprovidesuperiorconductionandswitchingperformanceincomparisonwithtransistorshavingaplanargatestructure.Theyalsohavewidenoiseimmunity.Thesedevicesareverysuitableforstrobeapplica

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGU20N40

Highinputimpedance

GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withatrenchgatestructureprovidesuperiorconductionandswitchingperformanceincomparisonwithtransistorshavingaplanargatestructure.Theyalsohavewidenoiseimmunity.Thesedevicesareverysuitableforstrobeapplica

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGU20N40L

Highinputimpedance

GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withatrenchgatestructureprovidesuperiorconductionandswitchingperformanceincomparisonwithtransistorshavingaplanargatestructure.Theyalsohavewidenoiseimmunity.Thesedevicesareverysuitableforstrobeapplica

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

詳細參數(shù)

  • 型號：

    FQA20N40

  • 功能描述：

    MOSFET 400V N-Channel QFET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
仙童
05+
TO-247
1000
原裝進口
 詢價
FAIRCHILD
24+
TO-247TO-3PTO-3PF
8866
詢價
FSC
16+
TO-3P
10000
全新原裝現(xiàn)貨
 詢價
FAIRCHILD
24+
TO-3P
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價
FSC
2020+
TO-3P
360000
100%進口原裝正品公司現(xiàn)貨庫存
 詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
harris
16+
原廠封裝
10000
全新原裝正品,代理優(yōu)勢渠道供應(yīng),歡迎來電咨詢
 詢價
FSC
25+23+
TO-247
28160
絕對原裝正品全新進口深圳現(xiàn)貨
 詢價
FAIRCHILD/仙童
20+
TO-247TO-3PTO-3PF
36900
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
24+
TO-3P
6430
原裝現(xiàn)貨/歡迎來電咨詢
 詢價
更多FQA20N40供應(yīng)商 更新時間2025-5-3 10:32:00

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