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FQA32N20C

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=32A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=82mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQA32N20C

200V N-Channel MOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQB32N20C

200VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQI32N20C

200VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQP32N20C

200VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQPF32N20C

N-ChannelMOSFET

FEATURES ·DrainCurrent-ID=28A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.082Ω(Max)@VGS=10V APPLICATIONS ·SolarInverters ·SwitchModePowerSupplies ·DC-DCConverters ·Motordrives

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQPF32N20C

200VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IXTA32N20T

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTA32N20T

TrenchTMPowerMOSFETN-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Corporation

IXTP32N20T

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTP32N20T

TrenchTMPowerMOSFETN-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Corporation

KSM32N20C

200VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMF32N20C

200VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

MTV32N20E

TMOSPOWERFET32AMPERES200VOLTSRDS(on)=0.075OHM

ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesigna

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTV32N20E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=32A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=75mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTW32N20E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTW32N20E

TMOSPOWERFET32AMPERES200VOLTSRDS(on)=0.075OHM

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTW32N20E

PowerMOSFET32Amps,200VoltsN-ChannelTO-247

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTW32N20EG

PowerMOSFET32Amps,200VoltsN-ChannelTO-247

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

SDA32N20

SCHOTTKYDIODEARRAY

DEVICEDESCRIPTION TheSDA32SchottkyBarrierDiodeArrayisdesignedtoreducereflectionnoiseonhighspeedparalleldatalines. Thedevicehelpssuppresstransientscausedbytransmissionlinereflections,crosstalkandswitchingnoise. TheSDA32consistsofanarrayof16highspeedSchot

Zetex

Zetex Semiconductors

詳細(xì)參數(shù)

  • 型號:

    FQA32N20C

  • 功能描述:

    MOSFET 200V N-Channel Advance Q-FET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
onsemi
24+
TO-3PN
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
詢價
ONSEMI
2020
NA
900
全新原裝!優(yōu)勢庫存熱賣中!
詢價
FAIRCHILD/仙童
24+
TO-247
3520
只做原廠渠道 可追溯貨源
詢價
onsemi(安森美)
23+
TO-3P
7814
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
詢價
ON(安森美)
23+
TO-3
12279
公司只做原裝正品,假一賠十
詢價
仙童
06+
TO-247
1500
原裝庫存
詢價
Fairchild
23+
TO-3P
7750
全新原裝優(yōu)勢
詢價
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費送樣
詢價
ONSemiconductor
18+
NA
3368
進(jìn)口原裝正品優(yōu)勢供應(yīng)QQ3171516190
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harris
16+
原廠封裝
10000
全新原裝正品,代理優(yōu)勢渠道供應(yīng),歡迎來電咨詢
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更多FQA32N20C供應(yīng)商 更新時間2024-12-22 14:13:00