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FQD2N100TM

1000V N-Channel MOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQU2N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=1.6A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=9Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQU2N100

1000VN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQU2N100

1000VN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQU2N100

N-ChannelQFET?MOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQU2N100TU

N-ChannelQFET?MOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IXGP2N100

HighVoltageIGBT

IXYS

IXYS Corporation

IXGP2N100A

HighVoltageIGBT

IXYS

IXYS Corporation

IXTA2N100

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTA2N100

N-ChannelEnhancementModeAvalancheRated

HighVoltageMOSFET N-ChannelEnhancementMode AvalancheRated Features ?InternationalStandardPackages ?AvalancheRated ?LowPackageInductance(

IXYS

IXYS Corporation

IXTA2N100P

N-ChannelEnhancementModeAvalancheRated

PolarPowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity Applications:

IXYS

IXYS Corporation

IXTA2N100P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTP2N100

N-ChannelEnhancementModeAvalancheRated

HighVoltageMOSFET N-ChannelEnhancementMode AvalancheRated Features ?InternationalStandardPackages ?AvalancheRated ?LowPackageInductance(

IXYS

IXYS Corporation

IXTP2N100

iscN-ChannelMOSFETTransistor

?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤7?@VGS=10V ?Fullycharacterizedavalanchevoltageandcurrent ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATION ?DC/DCConverter ?Switch-ModeandResonant-Mod

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTP2N100P

iscN-ChannelMOSFETTransistor

?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤7.5?@VGS=10V ?Fullycharacterizedavalanchevoltageandcurrent ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATION ?DC/DCConverter ?Switch-ModeandResonant-M

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTP2N100P

N-ChannelEnhancementModeAvalancheRated

PolarPowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity Applications:

IXYS

IXYS Corporation

IXTY2N100P

N-ChannelEnhancementModeAvalancheRated

PolarPowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity Applications:

IXYS

IXYS Corporation

IXTY2N100P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

KSMD2N100

1000VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMU2N100

1000VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

詳細(xì)參數(shù)

  • 型號：

    FQD2N100TM

  • 功能描述：

    MOSFET 1000V N-Channel QFET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
ON原裝/FSC
23+
TO-252
280008
詢價
FSC
2020+
TO-252
8000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價
FAIRCHILD/仙童
24+
DPAK-3TO-252-3
3580
原裝現(xiàn)貨/15年行業(yè)經(jīng)驗歡迎詢價
 詢價
ONSEMI
18+ROHS
NA
7000
全新原裝!優(yōu)勢庫存熱賣中!
 詢價
ON
21+
TO252
10000
全新原裝公司現(xiàn)貨
詢價
ON/安森美
21+
TO-252
6000
原裝正品
 詢價
ON
20+
TO-252
2514
只做進(jìn)口原裝現(xiàn)貨深圳
 詢價
FAIRCHILD/仙童
11+19+
TO-252
6270
原裝正品 可含稅交易
 詢價
FAIRCHILD/仙童
24+
TO-252(DPAK)
4500
只做原廠渠道 可追溯貨源
 詢價
ON
23+
TO252
10000
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 詢價
更多FQD2N100TM供應(yīng)商 更新時間2024-12-22 21:47:00

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