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2N6041

POWER TRANSISTORS(10A,80W)

...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. FEATURES: ?Collector–EmitterSustainingVoltage- VCEO(sus)=60V(Min)–2N6040,2N6043 =80V(Min)–2N6041,2N6044 =100V(Min)–2N6042,2N6045 ?Collecto

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司

2N6041

COMPLEMENTARY SILICON POWER TRANSISTORS

Plasticmedium?powercomplementarysilicontransistorsaredesignedforgeneral?purposeamplifierandlow?speedswitchingapplications. Features ?HighDCCurrentGain?hFE=2500(Typ)@IC=4.0Adc ?Collector?EmitterSustainingVoltage?@100mAdc? VCEO(sus)=60Vdc(M

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2N6041

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. FEATURES: ?Collector–EmitterSustainingVoltage- VCEO(sus)=60V(Min)–2N6040,2N6043 =80V(Min)–2N6041,2N6044

bocaBoca Semiconductor Corporation

博卡博卡半導(dǎo)體公司

2N6041

NPN SILICON TRANSISTOR

DESCRIPTION TheCENTRALSEMICONDUCTOR2N5294,5296and5298typesaresiliconNPNtransistorsthataremanufacturedbytheepitaxialbaseprocessanddesignedforapplicationsthatrequirepoweramplifierandmediumswitchingcapablilites.

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

2N6041

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION TheCENTRALSEMICONDUCTOR2N6040and2N6043SeriestypesareComplementarySiliconPowerTransistors,manufacturedbytheepitaxialbaseprocess,designedforgeneralpurposeamplifierapplications. MARKING:FULLPARTNUMBER

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

2N6041

isc Silicon PNP Darlington Power Transistor

DESCRIPTION ?HighDCCurrentGain-:hFE=1000(Min)@IC=-4A ?Collector-EmitterSustainingVoltage-:VCEO(SUS)=-80V(Min) ?LowCollector-EmitterSaturationVoltage-:VCE(sat)=-2.0V(Max)@IC=-4A ?ComplementtoType2N6044 APPLICATIONS ?Designedforgeneralpurposeamplifierandl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2N6041

POWER DERATING

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

2N6041

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

2N6041 PBFREE

包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 封裝/外殼:TO-220-3 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管(BJT)- 單個 描述:TRANS PNP DARL 80V 8A TO-220

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

晶體管資料

  • 型號:

    2N6041

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-P+Darl+Di

  • 性質(zhì):

    低頻或音頻放大 (LF)_開關(guān)管 (S)_功率放大 (L

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    80V

  • 最大電流允許值:

    8A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    3

  • 可代換的型號:

    BD648,BD700,BD900,BDW74B,BDX54B,FC75B,

  • 最大耗散功率:

    75W

  • 放大倍數(shù):

    β>1000

  • 圖片代號:

    B-45

  • vtest:

    80

  • htest:

    999900

  • atest:

    8

  • wtest:

    75

詳細(xì)參數(shù)

  • 型號:

    2N6041

  • 功能描述:

    達(dá)林頓晶體管 PNP Darl SW

  • RoHS:

  • 制造商:

    Texas Instruments

  • 配置:

    Octal

  • 晶體管極性:

    NPN 集電極—發(fā)射極最大電壓

  • VCEO:

    50 V 發(fā)射極 - 基極電壓

  • VEBO:

    集電極—基極電壓

  • 最大直流電集電極電流:

    0.5 A

  • 最大工作溫度:

    + 150 C

  • 安裝風(fēng)格:

    SMD/SMT

  • 封裝/箱體:

    SOIC-18

  • 封裝:

    Reel

供應(yīng)商型號品牌批號封裝庫存備注價格
MOT
24+
TO-220
22
詢價
BOCA
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價
ON/安森美
2021+
TO-220
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
詢價
CENTRAL
1809+
TO-220
1675
就找我吧!--邀您體驗愉快問購元件!
詢價
ST/意法
23+
TO-220
10000
公司只做原裝正品
詢價
Central
22+
NA
680
加我QQ或微信咨詢更多詳細(xì)信息,
詢價
ST
22+
TO-220
6000
十年配單,只做原裝
詢價
2N6041
16
16
詢價
Central Semiconductor Corp
2022+
TO-220
38550
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
詢價
ON
22+
TO-220
10000
絕對進(jìn)口原裝現(xiàn)貨
詢價
更多2N6041供應(yīng)商 更新時間2024-10-28 10:50:00