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2N6057

POWER TRANSISTORS(12A,150W)

DARLINGTON12AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60-100VOLTS150WATTS ...designedlorgeneral-purposepoweramplifierandlowfrequencyswitchingapplications FEATURES: *MonolithicConstructionwithButt-inBase-EmitterShuntResistors. *HighDCCurrentGain-

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導體股份有限公司

2N6057

DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS

DARLINGTON12AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60-100VOLTS150WATTS

bocaBoca Semiconductor Corporation

博卡博卡半導體公司

2N6057

Power Transistors

PowerTransistors

ETCList of Unclassifed Manufacturers

未分類制造商

2N6057

POWER COMPLEMENTARY SILICON TRANSISTORS

POWERCOMPLEMENTARYSILICONTRANSISTORS The2N6050,2N6051and2N6052aresiliconepitaxial-basetransistorsinmonolithicDarlingtonconfigurationmountedinJedecTO-3metalcase. Theyareintededforuseinpowerlinearandlowfrequencyswitchingapplications. ThecomplementaryNPNtypesar

COMSET

Comset Semiconductor

2N6057

DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS

DARLINGTON12AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60-100VOLTS150WATTS ...designedlorgeneral-purposepoweramplifierandlowfrequencyswitchingapplications FEATURES: *MonolithicConstructionwithButt-inBase-EmitterShuntResistors. *HighDCCurrentGain-

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

2N6057

SILICON DARLINGTON POWER TRANSISTORS

DESCRIPTION: TheCENTRALSEMICONDUCTOR2N6050,2N6057seriestypesarecomplementarysiliconDarlingtonpowertransistors,manufacturedbytheepitaxialbaseprocess,designedforhighgainamplifierandswitchingapplications.

CentralCentral Semiconductor Corp

美國中央半導體

2N6057

DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS

DARLINGTON12AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60-100VOLTS150WATTS ...designedlorgeneral-purposepoweramplifierandlowfrequencyswitchingapplications FEATURES: *MonolithicConstructionwithButt-inBase-EmitterShuntResistors. *HighDCCurrentGain-

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

2N6057

POWER COMPLEMENTARY SILICON TRANSISTORS

COMSET

Comset Semiconductor

2N6057

isc Silicon NPN Darlingtion Power Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2N6057

Bipolar NPN Device in a Hermetically sealed TO3

SEME-LAB

Seme LAB

晶體管資料

  • 型號:

    2N6057

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-N+Darl+Di

  • 性質:

    低頻或音頻放大 (LF)_開關管 (S)_功率放大 (L

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    60V

  • 最大電流允許值:

    12A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    2

  • 可代換的型號:

    BDV67,BDW83A,BDX65,BDX67,BDX87A,FH9C,MJ4033,TIP640,

  • 最大耗散功率:

    150W

  • 放大倍數(shù):

    β>750

  • 圖片代號:

    E-44

  • vtest:

    60

  • htest:

    999900

  • atest:

    12

  • wtest:

    150

產(chǎn)品屬性

  • 產(chǎn)品編號:

    2N6057

  • 制造商:

    Microchip Technology

  • 類別:

    分立半導體產(chǎn)品 > 晶體管 - 雙極性晶體管(BJT)- 單個

  • 包裝:

    卷帶(TR)

  • 晶體管類型:

    NPN - 達林頓

  • 不同?Ib、Ic 時?Vce 飽和壓降(最大值):

    2V @ 24mA, 6A

  • 電流 - 集電極截止(最大值):

    1mA

  • 不同?Ic、Vce?時 DC 電流增益 (hFE)(最小值):

    750 @ 6A,3V

  • 工作溫度:

    -65°C ~ 200°C(TJ)

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-204AA,TO-3

  • 供應商器件封裝:

    TO-204AA(TO-3)

  • 描述:

    POWER BJT

供應商型號品牌批號封裝庫存備注價格
24+
TO-3
10000
全新
詢價
MOTOROLA
24+
TO-3
1500
原裝現(xiàn)貨假一罰十
詢價
ON
24+
TO-3
5000
全現(xiàn)原裝公司現(xiàn)貨
詢價
BOCA
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
MOTOROLA/摩托羅拉
專業(yè)鐵帽
TO-3
1500
原裝鐵帽專營,代理渠道量大可訂貨
詢價
MOTOROLA/摩托羅拉
專業(yè)鐵帽
TO-3
67500
鐵帽原裝主營-可開原型號增稅票
詢價
MOTO
2023+
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
MOTO
24+
35210
一級代理/放心采購
詢價
MOT
94
4
公司優(yōu)勢庫存 熱賣中!!
詢價
ON/安森美
2048+
TO-3
9851
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
詢價
更多2N6057供應商 更新時間2025-1-26 16:00:00