首頁 >2N7002-CAR>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
2N7002-CAR | N-Channel Enhancement Mode Field Effect TransistorFeatures ?HighdensitycelldesignforlowRDS(ON)?Voltagecontrolledsmallsignalswitching?Highsaturationcurrentcapability?Highspeedswitching?-CARforautomotiveandotherapplicationsrequiringuniquesiteandcontrolchangerequirements;AEC-Q101qualifiedandPPAPcapable | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司 | GWSEMI | |
60V,0.3AN-channelTrenchMOSFET Generaldescription ESDprotectedN-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. Features ●Logic-levelcompatible ●Veryfastswitching ●TrenchMOSFETtechnology ●ESDprotect | nxpNXP Semiconductors 恩智浦恩智浦半導體公司 | nxp | ||
N-CHANNELENHANCEMENTMODEMOSTRANSISTOR | SEME-LAB Seme LAB | SEME-LAB | ||
60VN-ChannelMOSFET | CITCChip Integration Technology Corporation 竹懋科技竹懋科技股份有限公司 | CITC | ||
DUALN-CHANNELENHANCEMENTMODEMOSTRANSISTOR | SEME-LAB Seme LAB | SEME-LAB | ||
DualN-ChannelEnhancementMOSFET | CHENMKOchenmko 力勤股份有限公司 | CHENMKO | ||
Plastic-EncapsulatedTransistors MOSFET(N-Channel) FEATURES Powerdissipation PD:0.2W(Tamb=25℃) Collectorcurrent ID:115mA Collector-basevoltage VDS:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TEL TRANSYS Electronics Limited | TEL | ||
60VN-ChannelEnhancementModeMOSFET | PANJITPan Jit International Inc. 強茂股份有限公司 | PANJIT | ||
60VN-ChannelEnhancementModeMOSFET DUALN-CHANNELENHANCEMENTMODEMOSFETS Thisspace-efficientdevicecontainstwoelectrically-isolatedN-Channelenhancement-modeMOSFETs.ItcomesinaverysmallSOT-363(SC70-6L)package.Thisdeviceisidealforportableapplicationswhereboardspaceisatapremium. FEATURES ●LowOn-Re | PANJITPan Jit International Inc. 強茂股份有限公司 | PANJIT | ||
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(Rds(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?LowGateThresholdVoltage ?Lo | DIODES Diodes Incorporated | DIODES | ||
DualN-ChannelMOSFET Features: *LowOn-Resistance:7.5Ω *LowInputCapacitance:22PF *LowOutputCapacitance:11PF *LowThreshole:1.5V(TYE) *FastSwitchingSpeed:11ns MechanicalData: *Case:SOT-363,MoldedPlastic *CaseMaterial-ULFlammabilityRating94V-0 *Terminals:SolderableperMIL-STD- | WEITRON Weitron Technology | WEITRON | ||
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR | DIODES Diodes Incorporated | DIODES | ||
N-ChannelEnhancementModeFieldEffectTransistor Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?LeadFree/RoHSCompliant | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
OptiMOS??Small-Signal-Transistor Features ?DualN-channel ?Enhancementmode ?Logiclevel ?Avalancherated ?Fastswitching ?QualifiedaccordingtoAECQ101 ?100lead-free;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21 | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-ChannelMOSFET | MCCMicro Commercial Components 美微科美微科半導體股份有限公司 | MCC | ||
SmallSignalMOSFET SmallSignalMOSFET115mAmps,60Volts N–ChannelSOT–363 | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR | DIODES Diodes Incorporated | DIODES | ||
300mAmps,60VoltsDUALN-CHANNELPOWERMOSFET DESCRIPTION TheUTC2N7002DWusesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *HighDensityCellDesignforLowRDS(ON) *VoltageControlledSmallSign | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | ||
N-ChannelMOSFET Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1 ?HighdensitycelldesignforlowRDS(ON) ?Ruggedandreliable ?Voltagecontrolledsmallsignalswitch ?OperatingJunctionTemperature:-55to+ | MCCMicro Commercial Components 美微科美微科半導體股份有限公司 | MCC | ||
DualN-ChannelMOSFET ■Features ●VDS(V)=60V ●ID=115mA(VGS=10V) ●RDS(ON) | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實業(yè)有限公司 | KEXIN |
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
NXP |
16+ |
SOT-23 |
6500 |
進口原裝現(xiàn)貨/價格優(yōu)勢! |
詢價 | ||
NXP |
12+ |
SOT23 |
1000 |
原裝現(xiàn)貨價格有優(yōu)勢量大可以發(fā)貨 |
詢價 | ||
NXP |
16+ |
NA |
8800 |
誠信經營 |
詢價 | ||
NXP |
17+ |
SOT23 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
NXP |
24+ |
SOT23-3 |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價 | ||
Nexperia |
18+ |
NA |
3000 |
進口原裝正品優(yōu)勢供應QQ3171516190 |
詢價 | ||
NXP |
2018+ |
SOT23 |
11256 |
只做進口原裝正品!假一賠十! |
詢價 | ||
NA |
19+ |
59069 |
原廠代理渠道,每一顆芯片都可追溯原廠; |
詢價 | |||
NXP |
24+ |
SOT23-3 |
90000 |
NXP一級代理商原裝進口現(xiàn)貨,假一賠十 |
詢價 | ||
SOT-23 |
23+ |
NA |
15659 |
振宏微專業(yè)只做正品,假一罰百! |
詢價 |
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