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2N7002DW-TP

N-Channel MOSFET

Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1 ?HighdensitycelldesignforlowRDS(ON) ?Ruggedandreliable ?Voltagecontrolledsmallsignalswitch ?OperatingJunctionTemperature:-55to+

MCCMicro Commercial Components

美微科美微科半導體股份有限公司

2N7002E

N-Channel60-V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?LowOn-Resistance:3? ?LowThreshold:2V(typ.) ?LowInputCapacitance:25pF ?FastSwitchingSpeed:7.5ns ?LowInputandOutputLeakage ?ComplianttoRoHSDirective2002/95/EC BENEFITS ?LowOffsetVoltage ?Low-Vo

VishayVishay Siliconix

威世科技威世科技半導體

2N7002E

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapaci

DIODES

Diodes Incorporated

2N7002E

N-channelTrenchMOSFET

Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology. Features ■Logiclevelthresholdcompatible ■Surface-mountedpackage ■Veryfastswitching ■TrenchMOStechnology Applications ■Logicleveltranslator ■High-sp

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

2N7002E

N-ChannelEnhanceentModeFieldEffectTransistor

Features ●LowOn-Resistance:RDS(ON) ●LowGateThresholdVoltage ●LowInputCapacitance ●FastSwitchingSpeed ●LowInput/OutputLeakage

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

2N7002E

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

2N7002E

SmallSignalMOSFET60V,310mA,Single,N??hannel,SOT??3

Features ?LowRDS(on) ?SmallFootprintSurfaceMountPackage ?TrenchTechnology ?SPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC?Q101Qualifiedand PPAPCapable ?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoH

ONSEMION Semiconductor

安森美半導體安森美半導體公司

2N7002E

N-CHANNELENHANCEMENT-MODEMOSFET

Features ?LowOn-Resistance:RDS(ON) ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣諾電子淄博圣諾電子工程有限公司

2N7002E

SmallSignalMOSFET

ONSEMION Semiconductor

安森美半導體安森美半導體公司

2N7002E

SuperhighdensecelldesignforlowRDS(ON).

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SOT-23package.

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

詳細參數(shù)

  • 型號：

    2N7002DW-T

  • 功能描述：

    MOSFET Dual N-CH 60V 115mA

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
Micro Commercial Co
24+
6-TSSOP,SC-88,SOT-363
30000
晶體管-分立半導體產品-原裝正品
 詢價
MCC
24+
SOT-363
7500
詢價
MCC
23+
SOT-363
7750
全新原裝優(yōu)勢
 詢價
MCC
2018+
SOT363
6528
承若只做進口原裝正品假一賠十!
 詢價
MCC/美微科
22+
SOT363
39940
原裝正品現(xiàn)貨
 詢價
Micro
1942+
N/A
908
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
MCC/美微科
22+
SOT363
20000
保證原裝正品,假一陪十
 詢價
MCC(美微科)
2447
SOT-363
105000
3000個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,
 詢價
MCC/美微科
21+
SOT363
2900
原裝現(xiàn)貨假一賠十
 詢價
MICRO
1809+
SOT-363
3675
就找我吧!--邀您體驗愉快問購元件!
 詢價
更多2N7002DW-T供應商 更新時間2025-2-26 20:41:00

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