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2SC3356Q-G

General Purpose Transistor

Features -Lownoiseandhighgain. -Highpowergain. -Designedforlownoiseamplifier.

COMCHIPComchip Technology

典琦典琦科技股份有限公司

2SC3356

NPNTransistors

Features Lownoiseandhighgain. NF=1.1dBTyp.,Ga=11dBTyp.@VCE=10V,IC=7mA,f=1.0GHz Highpowergain. MAG=13dBTyp.@VCE=10V,IC=20mA,f=1.0GHz

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

2SC3356

SiliconNPNtransistorinaSOT-23PlasticPackage

Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage. Features Lownoiseandhighpowergain. Applications lownoiseamplifieratVHF,UHFandCATVbandapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍箭電子佛山市藍箭電子股份有限公司

2SC3356

LowNoiseandHighGain

DESCRIPTION The2SC3356isanNPNsiliconepitaxialtransistordesignedforlownoiseamplifieratVHF,UHFandCATVband. Ithasdynamicrangeandgoodcurrentcharacteristic. FEATURES ?LowNoiseandHighGain NF=1.1dBTYP.,Ga=11dBTYP.@VCE=10V,IC=7mA,f=1.0

YEASHINYea Shin Technology Co., Ltd

亞昕科技亞昕科技股份有限公司

2SC3356

NPNEpitaxialSiliconRFTransistorforMicrowaveLow-NoiseAmplification3-pinMinimold

NPNSiliconRFTransistor NPNEpitaxialSiliconRFTransistorforMicrowaveLow-NoiseAmplification3-pinMinimold FEATURES ?Lownoiseandhighgain:NF=1.1dBTYP.,Ga=11dBTYP.@VCE=10V,IC=7mA,f=1GHz ?Highpowergain:MAG=13dBTYP.@VCE=10V,IC=20mA,

CEL

California Eastern Labs

2SC3356

TRANSISTOR(NPN)

FEATURES Powerdissipation PCM:0.2W(Tamb=25℃) Collectorcurrent ICM:0.1A Collector-basevoltage V(BR)CBO:20V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

MAKOSEMIMAKO SEMICONDUCTOR CO.,LIMITED

美科半導(dǎo)體美科半導(dǎo)體股份(香港)有限公司

2SC3356

TRANSISTOR(NPN)

FEATURES Powerdissipation PCM:0.2W(Tamb=25℃) Collectorcurrent ICM:0.1A Collector-basevoltage V(BR)CBO:20V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳實業(yè)深圳市永而佳實業(yè)有限公司

2SC3356

HIGHFREQUENCYLOWNOISEAMPLIFIER

UTCUnisonic Technologies

友順友順科技股份有限公司

2SC3356

SiliconEpitaxialPlanarTransistor

FEATURES ●Lownoiseandhighgain. NF=1.1dBTYP.,Ga=11dBTYP. @VCE=10V,IC=7mA,f=1.0GHz ●Highpowergain.MAG=13dBTYP. @VCE=10V,IC=20mA,f=1.0GHz. APPLICATIONS ●DesignedforlownoiseamplifieratVHF,UHFandCATVband.

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

2SC3356

SiliconEpitaxialPlanarTransistor

FEATURES ●Lownoiseandhighgain. NF=1.1dBTYP.,Ga=11dBTYP. @VCE=10V,IC=7mA,f=1.0GHz ●Highpowergain.MAG=13dBTYP. @VCE=10V,IC=20mA,f=1.0GHz. APPLICATIONS ●DesignedforlownoiseamplifieratVHF,UHFandCATVband.

BILINGalaxy Semi-Conductor Holdings Limited

銀河微電常州銀河世紀微電子股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
COMCHIP
23+
SOT-23
54344
原裝正品現(xiàn)貨
詢價
NEC
24+
SOT-23
210000
詢價
SOT-23
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
詢價
NEC
21+
SOT-23
6010
原裝現(xiàn)貨假一賠十
詢價
RENESAS
23+
SOT23
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
NEC
22+
SOT-23
25000
原裝現(xiàn)貨,價格優(yōu)惠,假一罰十
詢價
ST/意法
22+
SOT-23
50000
只做原裝正品,假一罰十,歡迎咨詢
詢價
RENESAS
18+
SOT23
6000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
NEC
23+
SOT23
6000
現(xiàn)貨庫存
詢價
NEC
2235+
SOT-23
31847
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
更多2SC3356Q供應(yīng)商 更新時間2025-1-22 8:26:00