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2SC3356R-G

General Purpose Transistor

Features -Lownoiseandhighgain. -Highpowergain. -Designedforlownoiseamplifier.

COMCHIPComchip Technology

典琦典琦科技股份有限公司

2SC3356

NPNTransistors

Features Lownoiseandhighgain. NF=1.1dBTyp.,Ga=11dBTyp.@VCE=10V,IC=7mA,f=1.0GHz Highpowergain. MAG=13dBTyp.@VCE=10V,IC=20mA,f=1.0GHz

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

2SC3356

SiliconNPNtransistorinaSOT-23PlasticPackage

Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage. Features Lownoiseandhighpowergain. Applications lownoiseamplifieratVHF,UHFandCATVbandapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司

2SC3356

LowNoiseandHighGain

DESCRIPTION The2SC3356isanNPNsiliconepitaxialtransistordesignedforlownoiseamplifieratVHF,UHFandCATVband. Ithasdynamicrangeandgoodcurrentcharacteristic. FEATURES ?LowNoiseandHighGain NF=1.1dBTYP.,Ga=11dBTYP.@VCE=10V,IC=7mA,f=1.0

YEASHINYea Shin Technology Co., Ltd

亞昕科技亞昕科技股份有限公司

2SC3356

NPNEpitaxialSiliconRFTransistorforMicrowaveLow-NoiseAmplification3-pinMinimold

NPNSiliconRFTransistor NPNEpitaxialSiliconRFTransistorforMicrowaveLow-NoiseAmplification3-pinMinimold FEATURES ?Lownoiseandhighgain:NF=1.1dBTYP.,Ga=11dBTYP.@VCE=10V,IC=7mA,f=1GHz ?Highpowergain:MAG=13dBTYP.@VCE=10V,IC=20mA,

CEL

California Eastern Labs

2SC3356

TRANSISTOR(NPN)

FEATURES Powerdissipation PCM:0.2W(Tamb=25℃) Collectorcurrent ICM:0.1A Collector-basevoltage V(BR)CBO:20V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

MAKOSEMIMAKO SEMICONDUCTOR CO.,LIMITED

美科半導(dǎo)體美科半導(dǎo)體股份（香港）有限公司

2SC3356

TRANSISTOR(NPN)

FEATURES Powerdissipation PCM:0.2W(Tamb=25℃) Collectorcurrent ICM:0.1A Collector-basevoltage V(BR)CBO:20V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳實(shí)業(yè)深圳市永而佳實(shí)業(yè)有限公司

2SC3356

HIGHFREQUENCYLOWNOISEAMPLIFIER

UTCUnisonic Technologies

友順友順科技股份有限公司

2SC3356

SiliconEpitaxialPlanarTransistor

FEATURES ●Lownoiseandhighgain. NF=1.1dBTYP.,Ga=11dBTYP. @VCE=10V,IC=7mA,f=1.0GHz ●Highpowergain.MAG=13dBTYP. @VCE=10V,IC=20mA,f=1.0GHz. APPLICATIONS ●DesignedforlownoiseamplifieratVHF,UHFandCATVband.

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

2SC3356

SiliconEpitaxialPlanarTransistor

FEATURES ●Lownoiseandhighgain. NF=1.1dBTYP.,Ga=11dBTYP. @VCE=10V,IC=7mA,f=1.0GHz ●Highpowergain.MAG=13dBTYP. @VCE=10V,IC=20mA,f=1.0GHz. APPLICATIONS ●DesignedforlownoiseamplifieratVHF,UHFandCATVband.

BILINGalaxy Semi-Conductor Holdings Limited

世紀(jì)微電子常州銀河世紀(jì)微電子股份有限公司

2SC3356

NPNSiliconRFTransistor

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SC3356

SOT-23

High-FrequencyAmplifierTransistor

GSMEGuilin Strong Micro-Electronics Co., Ltd.

桂微桂林斯壯桂微電子有限責(zé)任公司(簡(jiǎn)稱‘桂微’)

2SC3356

NPNSiliconRFTransistor

NPNSiliconRFTransistor NPNEpitaxialSiliconRFTransistorforMicrowaveLow-NoiseAmplification3-pinMinimold *Lownoiseandhighgain:NF=1.1dBTYP.,Ga=11dBTYP.@VCE=10V,IC=7mA,f=1GHz *Highpowergain:MAG=13dBTYP.@VCE=10V,IC=20mA,f=1GHz

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SC3356

HIGHFREQUENCYLOWNOISEAMPLIFIER

HIGHFREQUENCYLOWNOISEAMPLIFIER ■DESCRIPTION TheUTC2SC3356isdesignedforsuchapplicationsas:DC/DCconverters,supplylineswitching,batterycharger,LCDbacklighting,peripheraldrivers,Driverinlowsupplyvoltageapplications(e.g.lampsandLEDs)andinductiveloaddriver(e.g.r

UTCUnisonic Technologies

友順友順科技股份有限公司

2SC3356

TRANSISTOR(NPN)

FEATURES Powerdissipation PCM:0.2W(Tamb=25℃) Collectorcurrent ICM:0.1A Collector-basevoltage V(BR)CBO:20V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金譽(yù)半導(dǎo)體深圳市金譽(yù)半導(dǎo)體股份有限公司

2SC3356

HIGHFREQUENCYLOWNOISEAMPLIFIER

UTCUnisonic Technologies

友順友順科技股份有限公司

2SC3356

NPNSiliconPlastic-EncapsulateTransistor

FEATURES ?PowerDissipation ?RoHSCompliantProduct

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2SC3356

High-FrequencyAmplifierTransistorNPNSilicon

FEATURES *LownoiseamplifieratVHF,UHFandCATVband. *LowNoiseandHighGain *HighPowerGain

WEITRON

Weitron Technology

2SC3356

Itisanultra-high-frequencylow-noisetransistor,usingplanarNPNsiliconoutside

Description 2SC3356isanultra-highfrequencylow-noisetransistor,usingplanarNPNsiliconoutside. Extendedbipolarprocess.Ithashighpowergain,lownoisefigure,largedynamicrangeandidealcurrentcharacteristics. Use SOT-23/SC-59SMDpackage,mainlyusedinVHF,UHFandCATVhi

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

2SC3356

NPNPlastic-EncapsulateTransistors

JINGHENGJinan Jing Heng Electronics Co., Ltd.

晶恒濟(jì)南晶恒電子有限責(zé)任公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
COMCHIP
23+
SOT-23
54344
原裝正品現(xiàn)貨
 詢價(jià)
ST
2024+
SOT-23
188600
全新原廠原裝正品現(xiàn)貨 歡迎咨詢
 詢價(jià)
NEC
2020+
SOT23
5000
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
 詢價(jià)
ST(意法)
23+
N/A
589610
新到現(xiàn)貨 原廠一手貨源 價(jià)格秒殺代理!
 詢價(jià)
GALAXY
23+
SOT-23
212000
原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道?？商峁┐罅繋?kù)存,詳
 詢價(jià)
ST
22+
SOT-23
50000
只做原裝正品,假一罰十,歡迎咨詢
 詢價(jià)
NEC
23+
SOT23
6000
現(xiàn)貨庫(kù)存
 詢價(jià)
SHIKUES
23+
NA
30
高頻管
 詢價(jià)
NEC
2023+
SOT-23
8700
原裝現(xiàn)貨
 詢價(jià)
24+
N/A
57000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
 詢價(jià)
更多2SC3356R-G供應(yīng)商 更新時(shí)間2024-11-8 17:10:00

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