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2SD2114KV

High-current Gain MediumPower Transistor (20V, 0.5A)

Features 1)HighDCcurrentgain. hFE=1200(Typ.) 2)Highemitter-basevoltage. VEBO=12V(Min.) 3)LowVCE(sat). VCE(sat)=0.18V(Typ.) (IC/IB=500mA/20mA)

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

2SD2114

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ?HighDCcurrentgain. ?Highemitter-basevoltage. ?LowVCE(sat).

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司

2SD2114

TRANSISTOR(NPN)

FEATURES ?HighDCcurrentgain. ?Highemitter-basevoltage. ?LowVCE(sat).

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金譽(yù)半導(dǎo)體深圳市金譽(yù)半導(dǎo)體股份有限公司

2SD2114

NPNPlastic-EncapsulateTransistor

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2SD2114

NPNPlasticEncapsulatedTransistor

FEATURE ?HighDCCurrentGain. ?HighEmitter-BaseVoltage.VEBO=12V(Min.)

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2SD2114K

High-currentGainMediumPowerTransistor(20V,0.5A)

Features 1)HighDCcurrentgain. hFE=1200(Typ.) 2)Highemitter-basevoltage. VEBO=12V(Min.) 3)LowVCE(sat). VCE(sat)=0.18V(Typ.) (IC/IB=500mA/20mA)

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

2SD2114K

High-currentGainMediumPowerTransistor(20V,0.5A)

Features 1)HighDCcurrentgain.hFE=1200(Typ.) 2)Highemitter-basevoltage.VEBO=12V(Min.) 3)LowVCE(sat).VCE(sat)=0.18V(Typ.)(IC/IB=500mA/20mA)

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

2SD2114K

High-currentGainMediumPowerTransistor

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

2SD2114K

High-currentGainMediumPowerTransistor(20V,0.5A)

Features 1)HighDCcurrentgain.hFE=1200(Typ.) 2)Highemitter-basevoltage.VEBO=12V(Min.) 3)LowVCE(sat).VCE(sat)=0.18V(Typ.) (IC/IB=500mA/20mA) Structure Epitaxialplanartype NPNsilicontransistor

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

2SD2114K

PowerTransistor

Features HighDCcurrentgain. Highemitter-basevoltage. LowVCE(sat).

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

2SD2114K

High-currentGainMediumPowerTransistor(20V,0.5A)

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

2SD2114KS

High-currentGainMediumPowerTransistor(20V,0.5A)

Features 1)HighDCcurrentgain.hFE=1200(Typ.) 2)Highemitter-basevoltage.VEBO=12V(Min.) 3)LowVCE(sat).VCE(sat)=0.18V(Typ.) (IC/IB=500mA/20mA) Structure Epitaxialplanartype NPNsilicontransistor

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

2SD2114KU

High-currentGainMediumPowerTransistor(20V,0.5A)

Features 1)HighDCcurrentgain. hFE=1200(Typ.) 2)Highemitter-basevoltage. VEBO=12V(Min.) 3)LowVCE(sat). VCE(sat)=0.18V(Typ.) (IC/IB=500mA/20mA)

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

2SD2114KW

High-currentGainMediumPowerTransistor(20V,0.5A)

Features 1)HighDCcurrentgain. hFE=1200(Typ.) 2)Highemitter-basevoltage. VEBO=12V(Min.) 3)LowVCE(sat). VCE(sat)=0.18V(Typ.) (IC/IB=500mA/20mA)

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào)：

    2SD2114KV

  • 制造商：

    ROHM

  • 制造商全稱：

    Rohm

  • 功能描述：

    High-current Gain MediumPower Transistor(20V, 0.5A)

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ROHM
21+
SOT-23
3000
原裝現(xiàn)貨假一賠十
 詢價(jià)
ROHM/羅姆
23+
SOT-23
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
ROHM/羅姆
2022
SOT-23
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價(jià)
ROHM
22+
SOT-23
25000
原裝現(xiàn)貨,價(jià)格優(yōu)惠,假一罰十
 詢價(jià)
ROHM
2016+
SOT-23
3000
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
原裝ROHM
22+
SOT-23
6500
詢價(jià)
ROHM
2234+
SOT-23
26395
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
 詢價(jià)
ROHM
589220
16余年資質(zhì) 絕對(duì)原盒原盤 更多數(shù)量
 詢價(jià)
ROHM/羅姆
23+
NA/
3000
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價(jià)
ROHM
23+
SOT-23
3000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
更多2SD2114KV供應(yīng)商 更新時(shí)間2025-1-14 14:01:00

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