2SD2150-S

NPN Plastic-Encapsulate Transistors

Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?Excellentcurrent-to-gaincharacteristics ?LowcollectorsaturationvoltageVCE(sat) ?LeadFreeFinish/RohsCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) ?EpoxymeetsUL94V-0flammabilityrati

2SD2150-S

Marking：CFS*；Package：SOT-89；NPN Transistors

■Features ●Excellentcurrent-to-gaincharacteristics ●LowcollectorsaturationvoltageVCE(sat) ●Complementaryto2SB1412

2SD2150-S

NPN Transistors

2SD2150-SOT89

NPN Transistors

■Features ●Excellentcurrent-to-gaincharacteristics ●LowcollectorsaturationvoltageVCE(sat) ●Complementaryto2SB1412

2SD2150-SOT-89

TRANSISTOR NPN)

TRANSISTOR(NPN) FEATURES Powerdissipation PCM:0.5WTamb=25°C Collectorcurrent ICM:3A Collector-basevoltage V(BR)CBO:40V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55°Cto+150°C

2SD2150-S-TP

Package：TO-243AA；包裝：帶盒（TB） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS NPN 20V 3A SOT89

2SD2150

LowFrequencyTransistor(20V,3A)

Features 1)LowVCE(sat). VCE(sat)=0.2V(Typ.) （IC/IB=2A/0.1A） 2)Excellentcurrentgaincharacteristics. 3)Complementsthe2SB1424.

2SD2150

SiliconNPNtransistorinaSOT-89PlasticPackage

Descriptions SiliconNPNtransistorinaSOT-89PlasticPackage. Features LowVCE(sat),excellentcurrentgaincharacteristic,Complementaryto2SB1424. Applications Generalpurposeamplifier.

2SD2150

LowFrequencyTransistor(20V,3A)

2SD2150

NPNPlasticEncapsulatedTransistor