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2SJ552

Silicon P Channel MOS FET High Speed Power Switching

SiliconPChannelMOSFET HighSpeedPowerSwitching Features ?Lowon-resistance RDS(on)=0.042?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.

HitachiHitachi Semiconductor

日立日立公司

2SJ552

Silicon P Channel MOS FET

Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.042?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ552L

Silicon P Channel MOS FET High Speed Power Switching

SiliconPChannelMOSFET HighSpeedPowerSwitching Features ?Lowon-resistance RDS(on)=0.042?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.

HitachiHitachi Semiconductor

日立日立公司

2SJ552L

Silicon P Channel MOS FET

Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.042?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ552L

isc P-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=-20A@TC=25℃ ·DrainSourceVoltage-VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.055Ω(MAX)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SJ552L-E

Silicon P Channel MOS FET

Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.042?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ552S

Silicon P Channel MOS FET High Speed Power Switching

SiliconPChannelMOSFET HighSpeedPowerSwitching Features ?Lowon-resistance RDS(on)=0.042?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.

HitachiHitachi Semiconductor

日立日立公司

2SJ552S

Silicon P Channel MOS FET

Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.042?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ552STL-E

Silicon P Channel MOS FET

Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.042?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ552(L)_15

Silicon P Channel MOS FET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細參數(shù)

  • 型號：

    2SJ552

  • 制造商：

    HITACHI

  • 制造商全稱：

    Hitachi Semiconductor

  • 功能描述：

    Silicon P Channel MOS FET High Speed Power Switching

供應商型號品牌批號封裝庫存備注價格
HITACHI/日立
2024
TO-262
500205
16余年資質 絕對原盒原盤代理渠道 更多數(shù)量
 詢價
HIT
24+
TO-251
20000
詢價
HIT
24+
TO-263
16800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
 詢價
RENESAS/瑞薩
25
TO-263-2
106
就找我吧!--邀您體驗愉快問購元件!
 詢價
RENESAS/瑞薩
23+
TO-263-2
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
RENESAS
22+
TO-263-2
6000
十年配單,只做原裝
 詢價
HITACHI/日立
23+
220
63881
原廠授權代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳
 詢價
HIT
06+
TO-262
1250
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
SANYO/三洋
22+
SOT-263
100000
代理渠道/只做原裝/可含稅
 詢價
HITACHI/日立
24+
NA/
4500
原裝現(xiàn)貨,當天可交貨,原型號開票
 詢價
更多2SJ552供應商 更新時間2025-4-10 17:06:00

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