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2SJ552S

Silicon P Channel MOS FET High Speed Power Switching

SiliconPChannelMOSFET HighSpeedPowerSwitching Features ?Lowon-resistance RDS(on)=0.042?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.

HitachiHitachi Semiconductor

日立日立公司

2SJ552S

Silicon P Channel MOS FET

Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.042?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ552STL-E

Silicon P Channel MOS FET

Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.042?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ552

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.042?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ552

SiliconPChannelMOSFETHighSpeedPowerSwitching

SiliconPChannelMOSFET HighSpeedPowerSwitching Features ?Lowon-resistance RDS(on)=0.042?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.

HitachiHitachi Semiconductor

日立日立公司

2SJ552(L)_15

SiliconPChannelMOSFET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ552L

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-20A@TC=25℃ ·DrainSourceVoltage-VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.055Ω(MAX)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SJ552L

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.042?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ552L

SiliconPChannelMOSFETHighSpeedPowerSwitching

SiliconPChannelMOSFET HighSpeedPowerSwitching Features ?Lowon-resistance RDS(on)=0.042?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.

HitachiHitachi Semiconductor

日立日立公司

2SJ552L-E

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.042?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細參數(shù)

  • 型號：

    2SJ552S

  • 制造商：

    HITACHI

  • 制造商全稱：

    Hitachi Semiconductor

  • 功能描述：

    Silicon P Channel MOS FET High Speed Power Switching

供應(yīng)商型號品牌批號封裝庫存備注價格
NEC
24+
TO-263
503132
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價
RENESAS
20+
TO-263
36900
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
HIT
24+
TO-262
16800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
 詢價
RENESAS/瑞薩
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
RENESAS/瑞薩
2022
TO-263
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
NEC
2022+
LDPAK(S)-(1)TO-263
12888
原廠代理 終端免費提供樣品
 詢價
RENESAS/瑞薩
23+
NA/
31773
原裝現(xiàn)貨,當天可交貨,原型號開票
 詢價
RENESAS/瑞薩
2022+
TO-263
30000
進口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
 詢價
RENESAS/瑞薩
20+
TO-263
32500
現(xiàn)貨很近!原廠很遠!只做原裝
 詢價
HITACHI/日立
24+
TO263
58000
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費!
 詢價
更多2SJ552S供應(yīng)商 更新時間2025-3-4 17:06:00

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