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2SJ552S

Silicon P Channel MOS FET High Speed Power Switching

SiliconPChannelMOSFET HighSpeedPowerSwitching Features ?Lowon-resistance RDS(on)=0.042?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.

HitachiHitachi Semiconductor

日立日立公司

2SJ552S

Silicon P Channel MOS FET

Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.042?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ552STL-E

Silicon P Channel MOS FET

Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.042?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ552

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.042?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ552

SiliconPChannelMOSFETHighSpeedPowerSwitching

SiliconPChannelMOSFET HighSpeedPowerSwitching Features ?Lowon-resistance RDS(on)=0.042?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.

HitachiHitachi Semiconductor

日立日立公司

2SJ552(L)_15

SiliconPChannelMOSFET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ552L

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-20A@TC=25℃ ·DrainSourceVoltage-VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.055Ω(MAX)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SJ552L

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.042?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ552L

SiliconPChannelMOSFETHighSpeedPowerSwitching

SiliconPChannelMOSFET HighSpeedPowerSwitching Features ?Lowon-resistance RDS(on)=0.042?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.

HitachiHitachi Semiconductor

日立日立公司

2SJ552L-E

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.042?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號:

    2SJ552S

  • 制造商:

    HITACHI

  • 制造商全稱:

    Hitachi Semiconductor

  • 功能描述:

    Silicon P Channel MOS FET High Speed Power Switching

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NEC
24+
TO-263
503132
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
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RENESAS
20+
TO-263
36900
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HIT
24+
TO-262
16800
絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢!?
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RENESAS/瑞薩
21+
TO-263
30000
只做正品原裝現(xiàn)貨
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RENESAS/瑞薩
23+
TO-263
28523
公司只做原裝正品
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RENESAS/瑞薩
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
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RENESAS/瑞薩
2022
TO-263
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
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NEC
2022+
LDPAK(S)-(1)TO-263
12888
原廠代理 終端免費(fèi)提供樣品
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renesas
2023+
TO-252
80000
一級代理/分銷渠道價(jià)格優(yōu)勢 十年芯程一路只做原裝正品
詢價(jià)
RENESAS/瑞薩
23+
NA/
31773
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票
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更多2SJ552S供應(yīng)商 更新時(shí)間2024-12-27 10:12:00