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30N1200

Capacitive proximity sensors

IVOBaomeng Electronics (Shanghai) Co., Ltd

堡盟電子堡盟電子（上海）有限公司

FGA30N120FTD

1200V,30ATrenchIGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGA30N120FTDTU

1200V,30ATrenchIGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGH30N120FTD

Fieldstoptrenchtechnology

GeneralDescription Usingadvancedfieldstoptrenchtechnology,Fairchild’s1200VtrenchIGBTsoffersuperiorconductionandswitchingperformances,andeasyparalleloperationwithexceptionalavalancheruggedness.Thisdeviceisdesignedforsoftswitchingapplications. Features ?Fi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGH30N120FTDTU

Fieldstoptrenchtechnology

GeneralDescription Usingadvancedfieldstoptrenchtechnology,Fairchild’s1200VtrenchIGBTsoffersuperiorconductionandswitchingperformances,andeasyparalleloperationwithexceptionalavalancheruggedness.Thisdeviceisdesignedforsoftswitchingapplications. Features ?Fi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGW30N120H

DiscreteIGBT(High-SpeedVseries)1200V/30A

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會社

FGW30N120HD

DiscreteIGBT(High-SpeedVseries)1200V/30A

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會社

G30N120CN

75A,1200V,NPTSeriesN-ChannelIGBT

TheHGTG30N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofabip

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

GW30N120KD

30A-1200V-shortcircuitruggedIGBT

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

GWA30N120KD

30A,1200VshortcircuitruggedIGBTwithUltrafastdiode

Features ■Lowon-losses ■Highcurrentcapability ■Lowgatecharge ■Shortcircuitwithstandtime10μs ■IGBTco-packagedwithUltrafastfree-wheeling diode Applications ■Motorcontrol Description Thishighvoltageandshort-circuitruggedIGBT utilizestheadvancedPowerMESH?p

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

HGTG30N120CN

75A,1200V,NPTSeriesN-ChannelIGBT

TheHGTG30N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofabip

Intersil

Intersil Corporation

HGTG30N120CN

30A,1200VN-ChannelIGBT

Description TheHGTG30N120D2isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvarie

Intersil

Intersil Corporation

HGTG30N120CN

75A,1200V,NPTSeriesN-ChannelIGBT

TheHGTG30N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofabip

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HIH30N120TF

1200VFieldStopTrenchIGBT

SEMIHOW

SemiHow Co.,Ltd.

IHW30N120R

HighSpeed2-Technology

?Designedfor: -TV–HorizontalLineDeflection ?2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IHW30N120R

IGBTwithmonolithicbodydiodeforsoftswitchingApplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IXDH30N120

HighVoltageIGBTwithoptionalDiode

IXYS

IXYS Corporation

IXDH30N120

HighVoltageIGBTwithoptionalDiode

ShortCircuitSOACapabilitySquareRBSOA VCES=1200V IC25=60A VCE(sat)typ=2.4V Features ●NPTIGBTtechnology ●lowsaturationvoltage ●lowswitchinglosses ●squareRBSOA,nolatchup ●highshortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●M

IXYS

IXYS Corporation

IXDR30N120

HighVoltageIGBTwithoptionalDiodeISOPLUSTMpackage

HighVoltageIGBTwithoptionalDiodeISOPLUS?package(ElectricallyIsolatedBackSide) ShortCircuitSOACapability SquareRBSOA Features ?NPTIGBTtechnology -highswitchingspeed -lowswitchinglosses -squareRBSOA,nolatchup -highshortcircuitcapability -

IXYS

IXYS Corporation

IXDT30N120

HighVoltageIGBTwithoptionalDiode

ShortCircuitSOACapabilitySquareRBSOA VCES=1200V IC25=60A VCE(sat)typ=2.4V Features ●NPTIGBTtechnology ●lowsaturationvoltage ●lowswitchinglosses ●squareRBSOA,nolatchup ●highshortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●M

IXYS

IXYS Corporation

供應(yīng)商型號品牌批號封裝庫存備注價格
HARRIS
23+
TO-3P
6680
全新原裝優(yōu)勢
 詢價
TGAN
23+
TO-3P
5000
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳
 詢價
IR
22+
TO-3
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價
IR
23+
TO-3
8000
只做原裝現(xiàn)貨
 詢價
IR
23+
TO-3
7000
詢價
UTC
20232024
TO220F1
6000
老牌代理,長期現(xiàn)貨
 詢價
VBsemi(臺灣微碧)
2112+
TO-220AB
105000
50個/管一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期
 詢價
S
23+
TO-220AB
10000
公司只做原裝正品
 詢價
VBSEMI臺灣微碧
23+
TO-220AB
22820
原裝正品，支持實(shí)單
 詢價
JDP
23+
NA/
3275
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票
 詢價
更多30N120供應(yīng)商 更新時間2025-1-12 14:03:00

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