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FGH30N120FTDTU

Field stop trench technology

GeneralDescription Usingadvancedfieldstoptrenchtechnology,Fairchild’s1200VtrenchIGBTsoffersuperiorconductionandswitchingperformances,andeasyparalleloperationwithexceptionalavalancheruggedness.Thisdeviceisdesignedforsoftswitchingapplications. Features ?Fi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGH30N120FTDTU

包裝：管件 封裝/外殼：TO-247-3 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 1200V 60A 339W TO247

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FGW30N120H

DiscreteIGBT(High-SpeedVseries)1200V/30A

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

FGW30N120HD

DiscreteIGBT(High-SpeedVseries)1200V/30A

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

G30N120CN

75A,1200V,NPTSeriesN-ChannelIGBT

TheHGTG30N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofabip

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

GW30N120KD

30A-1200V-shortcircuitruggedIGBT

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

GWA30N120KD

30A,1200VshortcircuitruggedIGBTwithUltrafastdiode

Features ■Lowon-losses ■Highcurrentcapability ■Lowgatecharge ■Shortcircuitwithstandtime10μs ■IGBTco-packagedwithUltrafastfree-wheeling diode Applications ■Motorcontrol Description Thishighvoltageandshort-circuitruggedIGBT utilizestheadvancedPowerMESH?p

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

HGTG30N120CN

75A,1200V,NPTSeriesN-ChannelIGBT

TheHGTG30N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofabip

Intersil

Intersil Corporation

HGTG30N120CN

30A,1200VN-ChannelIGBT

Description TheHGTG30N120D2isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvarie

Intersil

Intersil Corporation

HGTG30N120CN

75A,1200V,NPTSeriesN-ChannelIGBT

TheHGTG30N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofabip

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HIH30N120TF

1200VFieldStopTrenchIGBT

SEMIHOW

SemiHow Co.,Ltd.

IHW30N120R

HighSpeed2-Technology

?Designedfor: -TV–HorizontalLineDeflection ?2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IHW30N120R

IGBTwithmonolithicbodydiodeforsoftswitchingApplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IXDH30N120

HighVoltageIGBTwithoptionalDiode

IXYS

IXYS Corporation

IXDH30N120

HighVoltageIGBTwithoptionalDiode

ShortCircuitSOACapabilitySquareRBSOA VCES=1200V IC25=60A VCE(sat)typ=2.4V Features ●NPTIGBTtechnology ●lowsaturationvoltage ●lowswitchinglosses ●squareRBSOA,nolatchup ●highshortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●M

IXYS

IXYS Corporation

IXDR30N120

HighVoltageIGBTwithoptionalDiodeISOPLUSTMpackage

HighVoltageIGBTwithoptionalDiodeISOPLUS?package(ElectricallyIsolatedBackSide) ShortCircuitSOACapability SquareRBSOA Features ?NPTIGBTtechnology -highswitchingspeed -lowswitchinglosses -squareRBSOA,nolatchup -highshortcircuitcapability -

IXYS

IXYS Corporation

IXDT30N120

HighVoltageIGBTwithoptionalDiode

ShortCircuitSOACapabilitySquareRBSOA VCES=1200V IC25=60A VCE(sat)typ=2.4V Features ●NPTIGBTtechnology ●lowsaturationvoltage ●lowswitchinglosses ●squareRBSOA,nolatchup ●highshortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●M

IXYS

IXYS Corporation

IXDT30N120

HighVoltageIGBTwithoptionalDiode

IXYS

IXYS Corporation

IXFB30N120P

PolarHiPerFETPowerMOSFET

IXYS

IXYS Corporation

IXFL30N120P

PolarPowerMOSFETHiPerFET

IXYS

IXYS Corporation

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    FGH30N120FTDTU

  • 制造商：

    onsemi

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝：

    管件

  • IGBT 類型：

    溝槽型場(chǎng)截止

  • 不同?Vge、Ic 時(shí)?Vce(on)（最大值）：

    2V @ 15V，30A

  • 輸入類型：

    標(biāo)準(zhǔn)

  • 工作溫度：

    -55°C ~ 150°C（TJ）

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-247-3

  • 供應(yīng)商器件封裝：

    TO-247-3

  • 描述：

    IGBT 1200V 60A 339W TO247

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Fairchild
24+
150
詢價(jià)
仙童
17+
NA
6200
100%原裝正品現(xiàn)貨
 詢價(jià)
FAIRCHI
24+
SMD
12000
原廠/代理渠道價(jià)格優(yōu)勢(shì)
 詢價(jià)
FAIRCHILD仙童
23+
TO247
10000
公司只做原裝正品
 詢價(jià)
FSC
23+
TO-247
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
Fairchild/ON
22+
TO247
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
Fairchild/ON
21+
TO247
13880
公司只售原裝,支持實(shí)單
 詢價(jià)
FAIRCHILD
TO-247
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
 詢價(jià)
FSC
10+
TO-247
44
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
ON
23+
TO-247
25
正規(guī)渠道,只有原裝!
 詢價(jià)
更多FGH30N120FTDTU供應(yīng)商 更新時(shí)間2024-12-28 16:30:00

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