| 零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
P-ChannelLogicLevelEnhancementModeFieldEffectTransistor Features: ●LowGateChargeforFastSwitchingApplication ●FastSwitching ●HighPowerandcurrenthandingcapability ●GreenDeviceAvailable Description: TheADM30P06EisthehighcelldensitytrenchedP-chMOSFETs,designtoprovideexcellentRDS(ON)withlowgatecharge.providesuper | ADVAdvanced (Shenzhen) Electronics Co.,Ltd 愛(ài)德微愛(ài)德微(深圳)電子有限公司 | ADV | ||
P-Channel60-V(D-S)MOSFET | BWTECH Bruckewell Technology LTD | BWTECH | ||
TMOSPOWERFET30AMPERES60VOLTS TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.JustaswithourTMOS | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
P-ChannelEnhancementModePowerMOSFET | CYSTEKECCystech Electonics Corp. 全宇昕科技全宇昕科技股份有限公司 | CYSTEKEC | ||
PowerMOSFET30Amps,60VoltsP-ChannelD2PAK ThisPowerMOSFETisdesignedtowithstandhighenergyinthe avalancheandcommutationmodes.Designedforlowvoltage,high speedswitchingapplicationsinpowersupplies,convertersandpower motorcontrols,thesedevicesareparticularlywellsuitedforbridge circuitswherediodespeedan | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
TMOSPOWERFET30AMPERES60VOLTS TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.JustaswithourTMOS | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
PowerMOSFET30Amps,60VoltsP??hannelD2PAK | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
PowerMOSFET30Amps,60VoltsP??hannelD2PAK | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
PowerMOSFET30Amps,60VoltsP-ChannelD2PAK ThisPowerMOSFETisdesignedtowithstandhighenergyinthe avalancheandcommutationmodes.Designedforlowvoltage,high speedswitchingapplicationsinpowersupplies,convertersandpower motorcontrols,thesedevicesareparticularlywellsuitedforbridge circuitswherediodespeedan | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
PowerMOSFET30Amps,60VoltsP-ChannelD2PAK ThisPowerMOSFETisdesignedtowithstandhighenergyinthe avalancheandcommutationmodes.Designedforlowvoltage,high speedswitchingapplicationsinpowersupplies,convertersandpower motorcontrols,thesedevicesareparticularlywellsuitedforbridge circuitswherediodespeedan | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM P–ChannelEnhancement–ModeSiliconGateTMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60volt | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM P–ChannelEnhancement–ModeSiliconGateTMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60volt | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
P??hannelPowerMOSFET | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
P-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司 | VBSEMI | ||
P??hannelPowerMOSFET | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
NCEP-ChannelEnhancementModePowerMOSFET Description TheNCE30P06Jusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltages.Thisdeviceissuitableforuseasaloadswitching applicationandawidevarietyofotherapplications. GeneralFeatures ●VDS=-30V,ID=-6.5A RDS(ON | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 無(wú)錫新潔能股份無(wú)錫新潔能股份有限公司 | NCEPOWER | ||
30A,60V,0.065Ohm,P-ChannelPowerMOSFETs TheseareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyaredesignedforuseinapplicationssuchasswitchingregulators,sw | Intersil Intersil Corporation | Intersil | ||
30A,60V,0.065Ohm,P-ChannelPowerMOSFETs TheseareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyaredesignedforuseinapplicationssuchasswitchingregulators,sw | Intersil Intersil Corporation | Intersil | ||
P-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司 | VBSEMI | ||
GlassPassivatedSuperFastRecoveryRectifier | YENYOYenyo Technology Co., Ltd. 元耀科技元耀科技股份有限公司 | YENYO |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
Infineon/英飛凌 |
24+ |
TO252 |
163000 |
一級(jí)代理保證進(jìn)口原裝正品現(xiàn)貨假一罰十價(jià)格合理 |
詢(xún)價(jià) | ||
INFINEON |
1844+ |
TO-252 |
6852 |
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!! |
詢(xún)價(jià) | ||
I |
23+ |
SOT-252 |
10000 |
公司只做原裝正品 |
詢(xún)價(jià) | ||
INFINEON/英飛凌 |
23+ |
TO252 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢(xún)價(jià) | ||
INFINEON |
23+ |
TO-252 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢(xún)價(jià) | ||
I |
22+ |
SOT-252 |
6000 |
十年配單,只做原裝 |
詢(xún)價(jià) | ||
INF |
TO-252 |
608900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢(xún)價(jià) | |||
INFINEON |
22+ |
TO-252 |
25000 |
原裝現(xiàn)貨,價(jià)格優(yōu)惠,假一罰十 |
詢(xún)價(jià) | ||
INF |
22+ |
TO-252 |
50000 |
只做原裝假一罰十,歡迎咨詢(xún) |
詢(xún)價(jià) | ||
INFINEON |
08+ |
TO-252 |
489 |
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力 |
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