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AP3N3R3MT

Marking：3N3R3；Package：PMPAK5x6；N-CHANNEL MOSFET WITH SCHOTTKY DIODE

Description AP3N3R3seriesarefromAdvancedPowerinnovateddesignandsiliconprocesstechnologytoachievethelowestpossibleon-resistanceandfastswitchingperformance.Itprovidesthedesignerwithanextremeefficientdeviceforuseinawiderangeofpowerapplications. ThePMPAK?5x6

A-POWERAdvanced Power Electronics Corp.

富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司

ESD562DBZRQ1

Marking：3NM8；Package：SOT-23；ESD562-Q1 12V Bi-Directional ESD Protection in SOT-23

1Features ?IEC61000-4-5surgeprotection: –3A(8/20μs) ?IEC61000-4-2ESDprotection: –±22kVcontactdischarge –±22kVairgapdischarge ?12Vworkingvoltage ?IOcapacitance: –1.5pF(typical) ?Bidirectionalpolaritytosupportpositiveand negativevoltageswings ?2channeld

TI1Texas Instruments

德州儀器

IPB70N10S3-12

Marking：3N1012；Package：PG-TO263-3-2；OptiMOS-T Power-Transistor

Features ?N-channel-Enhancementmode ?AutomotiveAECQ101qualified ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?Greenproduct(RoHScompliant) ?100Avalanchetested

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD35N10S3L-26

Marking：3N10L26；Package：PG-TO252-3-11；OptiMOS-T Power-Transistor

Features ?N-channel-Enhancementmode ?AutomotiveAECQ101qualified ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?Greenproduct(RoHScompliant) ?100Avalanchetested

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI70N10S3-12

Marking：3N1012；Package：PG-TO262-3-1；OptiMOS-T Power-Transistor

Features ?N-channel-Enhancementmode ?AutomotiveAECQ101qualified ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?Greenproduct(RoHScompliant) ?100Avalanchetested

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP70N10S3-12

Marking：3N1012；Package：PG-TO220-3-1；OptiMOS-T Power-Transistor

Features ?N-channel-Enhancementmode ?AutomotiveAECQ101qualified ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?Greenproduct(RoHScompliant) ?100Avalanchetested

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPTC030N12NM3

Marking：3N12030；Package：PG-HDSOP-16；MOSFET OptiMOSTM3 Power-Transistor, 120 V

Features ?N-channel,normallevel ?Verylowon-resistanceRDS(on) ?ExcellentgatechargexRDS(on)product(FOM) ?100avalanchetested ?Optimizedformotordrivesandbatterypoweredapplications. ?Optimizedfortopsidecooling. ?Idealforbatterymanagementswitchapplication ?Su

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

RM3N700S4

Marking：3N700；Package：SOT-223-2L；N-Channel Super Junction Power MOSFET

Features Newtechnologyforhighvoltagedevice Lowon-resistanceandlowconductionlosses Smallpackage UltraLowGateChargecauselowerdrivingrequirements 100%AvalancheTested ROHScompliant

RECTRON

Rectron Semiconductor

RMP3N80LD

Marking：3N80；Package：TO-252；N-Channel Enhancement Mosfet

Features 800V,3A RDS(ON)

RECTRON

Rectron Semiconductor

RMP3N90IP

Marking：3N900；Package：TO-251；N-Channel ENHANCEMENT MODE MOSFET

Features LowCrss Lowgatecharge Fastswitching ImprovedESDcapability 100%AvalancheTested ROHScompliant Halogen-free Improveddv/dtcapability

RECTRON

Rectron Semiconductor

替換型號

詳細(xì)參數(shù)

  • 型號：

    3N

  • 制造商：

    Power-One

供應(yīng)商型號品牌批號封裝庫存備注價格
FAIRCHILD/仙童
23+
SOT-23
15000
全新原裝現(xiàn)貨,價格優(yōu)勢
 詢價
DIODES/SE
24+
SOT323
63200
一級代理/放心采購
 詢價
DIODES/SEMTECH
25+
SOT323
54648
百分百原裝現(xiàn)貨 實(shí)單必成
 詢價
SANYO/三洋
23+
3
6500
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
SANYO/三洋
23+
3
6500
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
JST/日壓
2508+
/
209858
一級代理，原裝現(xiàn)貨
 詢價
NA
NA
NA
2885
原裝/現(xiàn)貨
 詢價
DIP96
20000
詢價
ZX
22+
N/A
12245
現(xiàn)貨,原廠原裝假一罰十!
 詢價
24+
N/A
73000
一級代理-主營優(yōu)勢-實(shí)惠價格-不悔選擇
 詢價
更多3N供應(yīng)商 更新時間2025-4-25 16:52:00

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