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NP40N055CHE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) ?Lowinputcapacitance Ciss=1070pFT

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP40N055CHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) ?Lowinputcapacitance Ciss=1070pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP40N055CHE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=40A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=23mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP40N055CLE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=40A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=23mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP40N055CLE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=23mΩMAX.(VGS=10V,ID=20A) RDS(on)2=28mΩMAX.(VGS=5.0V,ID=

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP40N055DHE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) ?Lowinputcapacitance Ciss=1070pFT

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP40N055DHE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=40A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=23mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP40N055DHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) ?Lowinputcapacitance Ciss=1070pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP40N055DLE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=40A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=23mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP40N055DLE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=23mΩMAX.(VGS=10V,ID=20A) RDS(on)2=28mΩMAX.(VGS=5.0V,ID=

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP40N055EHE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) ?Lowinputcapacitance Ciss=1070pFT

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP40N055EHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) ?Lowinputcapacitance Ciss=1070pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP40N055ELE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=40A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=23mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP40N055ELE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=23mΩMAX.(VGS=10V,ID=20A) RDS(on)2=28mΩMAX.(VGS=5.0V,ID=

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP40N055KHE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) ?Lowinputcapacitance Ciss=1070pFT

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP40N055KHE

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP40N055KHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) ?Lowinputcapacitance Ciss=1070pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP40N055KHE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=40A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=23mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP40N055KLE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=40A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=23mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP40N055KLE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=23mΩMAX.(VGS=10V,ID=20A) RDS(on)2=28mΩMAX.(VGS=5.0V,ID=

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

供應(yīng)商型號品牌批號封裝庫存備注價格
NEC
24+
TO-220
5000
只做原裝公司現(xiàn)貨
 詢價
N
23+
TO-220
10000
公司只做原裝正品
 詢價
17
24+
TO-220
3000
原裝現(xiàn)貨假一賠十
 詢價
N
22+
TO-220
6000
十年配單,只做原裝
 詢價
NEC
TO-220
608900
原包原標(biāo)簽100%進口原裝常備現(xiàn)貨!
 詢價
N
23+
TO-220
8400
專注配單,只做原裝進口現(xiàn)貨
 詢價
N
23+
TO-220
8400
專注配單,只做原裝進口現(xiàn)貨
 詢價
N
24+
TO-TO-220
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
UTG
23+
SOT-89
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
UTG
23+
NA/
8250
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票
 詢價
更多40N055供應(yīng)商 更新時間2025-1-16 10:20:00

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