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NP40N055KHE

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=40A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=23mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP40N055KHE

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) ?Lowinputcapacitance Ciss=1070pFT

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP40N055KHE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) ?Lowinputcapacitance Ciss=1070pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP40N055KHE

Product Scout Automotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP40N055KHE-E1-AY

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) ?Lowinputcapacitance Ciss=1070pFT

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP40N055KHE-E1-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) ?Lowinputcapacitance Ciss=1070pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP40N055KHE-E2-AY

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) ?Lowinputcapacitance Ciss=1070pFT

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP40N055KHE-E2-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) ?Lowinputcapacitance Ciss=1070pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP40N055KHE-E1-AYNote1

SWITCHING N-CHANNEL POWER MOS FET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP40N055KHE-E2-AYNote1

SWITCHING N-CHANNEL POWER MOS FET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    NP40N055KHE

  • 制造商：

    NEC

  • 制造商全稱：

    NEC

  • 功能描述：

    MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
NEC
2024
TO-263
503167
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力高端行業(yè)供應(yīng)商
 詢價(jià)
NEC
23+
TO-263
11805
全新原裝
 詢價(jià)
NEC
24+
TO-263
8866
詢價(jià)
NEC
6000
面議
19
TO-263
 詢價(jià)
JD/晶導(dǎo)
23+
SMA(DO-214AC)
69820
終端可以免費(fèi)供樣,支持BOM配單!
 詢價(jià)
RENESAS/瑞薩
22+
TO-263
20000
保證原裝正品,假一陪十
 詢價(jià)
R
23+
TO263
10000
公司只做原裝正品
 詢價(jià)
NEC
2022+
TO-263
12888
原廠代理 終端免費(fèi)提供樣品
 詢價(jià)
RENESAS/瑞薩
22+
TO-263
100000
代理渠道/只做原裝/可含稅
 詢價(jià)
RENESAS/瑞薩
23+
TO-263
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
 詢價(jià)
更多NP40N055KHE供應(yīng)商 更新時(shí)間2025-1-26 16:18:00

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