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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
NP40N055NHE	文件：298.7 Kbytes Page：12 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) ?Lowinputcapacitance Ciss=1070pFTYP. ?Built-ingateprotectiondiode	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP40N055NHE	文件：280.65 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=40A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=23mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
NP40N055NHE	文件：212.75 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) ?Lowinputcapacitance Ciss=1070pFT	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NP40N055NHE	文件：5.67799 Mbytes Page：6 Pages	Product Scout Automotive	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP40N055NHE-S18-AY	文件：212.75 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) ?Lowinputcapacitance Ciss=1070pFT	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NP40N055NHE-S18-AY	文件：298.7 Kbytes Page：12 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) ?Lowinputcapacitance Ciss=1070pFTYP. ?Built-ingateprotectiondiode	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP40N055NHE-S18-AYNote1	文件：299.28 Kbytes Page：12 Pages	SWITCHING N-CHANNEL POWER MOS FET	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP40N055CHE	文件：298.7 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) ?Lowinputcapacitance Ciss=1070pFTYP. ?Built-ingateprotectiondiode	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP40N055CHE	文件：212.75 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) ?Lowinputcapacitance Ciss=1070pFT	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NP40N055CHE	文件：371.56 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=40A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=23mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
NP40N055CLE	文件：372.21 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=40A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=23mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
NP40N055CLE	文件：213.79 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=23mΩMAX.(VGS=10V,ID=20A) RDS(on)2=28mΩMAX.(VGS=5.0V,ID=	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NP40N055DHE	文件：298.7 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) ?Lowinputcapacitance Ciss=1070pFTYP. ?Built-ingateprotectiondiode	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP40N055DHE	文件：212.75 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) ?Lowinputcapacitance Ciss=1070pFT	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NP40N055DHE	文件：280.65 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=40A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=23mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
NP40N055DLE	文件：281.28 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=40A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=23mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
NP40N055DLE	文件：213.79 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=23mΩMAX.(VGS=10V,ID=20A) RDS(on)2=28mΩMAX.(VGS=5.0V,ID=	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NP40N055EHE	文件：212.75 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) ?Lowinputcapacitance Ciss=1070pFT	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NP40N055EHE	文件：298.7 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) ?Lowinputcapacitance Ciss=1070pFTYP. ?Built-ingateprotectiondiode	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP40N055ELE	文件：345.25 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=40A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=23mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC

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詳細(xì)參數(shù)

型號(hào)：
NP40N055NHE
制造商：
NEC
制造商全稱(chēng)：
NEC
功能描述：
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
貿(mào)澤芯城（深圳）電子科技有限公司	NP40N055NHE	日本NEC	23+	TO-262	33000	原廠授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種	詢(xún)價(jià)
深圳市晨豪科技有限公司	NP40N055NHE	RENESAS/瑞薩	23+	TO-262	89630	當(dāng)天發(fā)貨全新原裝現(xiàn)貨	詢(xún)價(jià)
深圳市星辰微電科技有限公司	NP40N055NHE	RENESAS/瑞薩	22+	TO-262	12500	瑞薩全系列在售,終端可出樣品	詢(xún)價(jià)
深圳市芯皇電子有限公司	NP40N055NHE	RENESAS/瑞薩	22+	TO-262	9000	專(zhuān)業(yè)配單,原裝正品假一罰十,代理渠道價(jià)格優(yōu)	詢(xún)價(jià)
深圳市國(guó)宇半導(dǎo)體科技有限公司	NP40N055NLE-S18-AY	RENESAS/瑞薩	23+	TO-262	10000	公司只做原裝正品	詢(xún)價(jià)
深圳市鵬和科技有限公司	NP40N10	RENESA	24+	TO-252	5000	全現(xiàn)原裝公司現(xiàn)貨	詢(xún)價(jià)
深圳市威爾健半導(dǎo)體有限公司	NP40N10/VDF-E1-AY	RENESAS/瑞薩	23+	SOT252	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢(xún)價(jià)
深圳廊盛科技有限公司	NP40N10/VDF-E1-AY	RENESAS/瑞薩	2022	SOT252	80000	原裝現(xiàn)貨,OEM渠道,歡迎咨詢(xún)	詢(xún)價(jià)
深圳市博億誠(chéng)科技有限公司	NP40N10/VDF-E1-AY	RENESAS/瑞薩	23+	N/A	10000	只有原裝	詢(xún)價(jià)
深圳市得捷芯城科技有限公司	NP40N10/VDF-E1-AY	RENESAS/瑞薩	23+	NA/	100	優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開(kāi)增值稅票	詢(xún)價(jià)

更多NP40N055NHE供應(yīng)商更新時(shí)間2025-1-9 11:39:00

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