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NP48N055KLE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=17mΩMAX.(VGS=10V,ID=24A) RDS(on)2=21mΩMAX.(VGS=5V,ID=24A) RDS(on)3=24mΩMAX.(VGS=4.5V,ID=24A) ?Lowinputcapacitance Ciss=1970

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP48N055KLE

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=17mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP48N055KLE

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=17mΩMAX.(VGS=10V,ID=24A) RDS(on)2=21mΩMAX.(VGS=5V,ID=2

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP48N055KLE

Product Scout Automotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP48N055KLE-E1-AY

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=17mΩMAX.(VGS=10V,ID=24A) RDS(on)2=21mΩMAX.(VGS=5V,ID=2

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP48N055KLE-E1-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=17mΩMAX.(VGS=10V,ID=24A) RDS(on)2=21mΩMAX.(VGS=5V,ID=24A) RDS(on)3=24mΩMAX.(VGS=4.5V,ID=24A) ?Lowinputcapacitance Ciss=1970

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP48N055KLE-E2-AY

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=17mΩMAX.(VGS=10V,ID=24A) RDS(on)2=21mΩMAX.(VGS=5V,ID=2

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP48N055KLE-E2-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=17mΩMAX.(VGS=10V,ID=24A) RDS(on)2=21mΩMAX.(VGS=5V,ID=24A) RDS(on)3=24mΩMAX.(VGS=4.5V,ID=24A) ?Lowinputcapacitance Ciss=1970

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP48N055KLE-E1-AYNote1

SWITCHING N-CHANNEL POWER MOS FET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP48N055KLE-E2-AYNote1

SWITCHING N-CHANNEL POWER MOS FET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP48N055MHE

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP48N055MHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=17mΩMAX.(VGS=10V,ID=24A) ?Lowinputcapacitance Ciss=1600pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP48N055MHE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=17mΩMAX.(VGS=10V,ID=24A) ?Lowinputcapacitance Ciss=1600pFT

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP48N055MHE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=17mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP48N055MLE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=17mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP48N055MLE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=17mΩMAX.(VGS=10V,ID=24A) RDS(on)2=21mΩMAX.(VGS=5V,ID=2

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP48N055MLE

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP48N055MLE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=17mΩMAX.(VGS=10V,ID=24A) RDS(on)2=21mΩMAX.(VGS=5V,ID=24A) RDS(on)3=24mΩMAX.(VGS=4.5V,ID=24A) ?Lowinputcapacitance Ciss=1970

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP48N055NHE

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP48N055NHE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=17mΩMAX.(VGS=10V,ID=24A) ?Lowinputcapacitance Ciss=1600pFT

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

詳細(xì)參數(shù)

  • 型號(hào):

    NP48N055KLE

  • 制造商:

    NEC

  • 制造商全稱:

    NEC

  • 功能描述:

    MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
NEC
24+
TO-263
8866
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NEC
6000
面議
19
TO-263
詢價(jià)
NEC
2023+
TO-263
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
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FCS
23+
TO-2523L(DPAK)
69820
終端可以免費(fèi)供樣,支持BOM配單!
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R
23+
D2PAK
10000
公司只做原裝正品
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NEC
2022+
TO-263
12888
原廠代理 終端免費(fèi)提供樣品
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-
23+
NA
33000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
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RENESAS/瑞薩
23+
TO-263
6000
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RENESAS/瑞薩
22+
TO-263
100000
代理渠道/只做原裝/可含稅
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RENESAS/瑞薩
23+
TO-263
89630
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更多NP48N055KLE供應(yīng)商 更新時(shí)間2024-11-14 15:30:00