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NP48N055DHE

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=17mΩMAX.(VGS=10V,ID=24A) ?Lowinputcapacitance Ciss=1600pFT

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP48N055DHE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=17mΩMAX.(VGS=10V,ID=24A) ?Lowinputcapacitance Ciss=1600pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP48N055DHE

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=17mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP48N055DHE-S12-AY

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=17mΩMAX.(VGS=10V,ID=24A) ?Lowinputcapacitance Ciss=1600pFT

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP48N055DHE-S12-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=17mΩMAX.(VGS=10V,ID=24A) ?Lowinputcapacitance Ciss=1600pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP48N055DHE-S12-AYNote1,

SWITCHING N-CHANNEL POWER MOS FET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP48N055DLE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=17mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP48N055DLE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=17mΩMAX.(VGS=10V,ID=24A) RDS(on)2=21mΩMAX.(VGS=5V,ID=24A) RDS(on)3=24mΩMAX.(VGS=4.5V,ID=24A) ?Lowinputcapacitance Ciss=1970

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP48N055DLE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=17mΩMAX.(VGS=10V,ID=24A) RDS(on)2=21mΩMAX.(VGS=5V,ID=2

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP48N055EHE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=17mΩMAX.(VGS=10V,ID=24A) ?Lowinputcapacitance Ciss=1600pFT

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

詳細(xì)參數(shù)

  • 型號：

    NP48N055DHE

  • 功能描述：

    TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 48A I(D) | TO-262AA

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
NEC
24+
TO-262
8866
詢價(jià)
NEC
23+
TO-262
12208
全新原裝
 詢價(jià)
NEC
6000
面議
19
TO-262
 詢價(jià)
R
23+
D2PAK
10000
公司只做原裝正品
 詢價(jià)
VB
21+
D2PAK
10000
原裝現(xiàn)貨假一罰十
 詢價(jià)
RENESAS/瑞薩
2022+
TO-263
32500
原廠代理 終端免費(fèi)提供樣品
 詢價(jià)
VB
D2PAK
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
 詢價(jià)
RENESAS/瑞薩
23+
TO-263
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
 詢價(jià)
RENESAS/瑞薩
2022+
TO-263
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
 詢價(jià)
RENESAS/瑞薩
22+
TO-263
12500
瑞薩全系列在售,終端可出樣品
 詢價(jià)
更多NP48N055DHE供應(yīng)商 更新時(shí)間2025-2-28 15:30:00

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