首頁 >NP40N055EHE>規(guī)格書列表
零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
NP40N055EHE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) ?Lowinputcapacitance Ciss=1070pFT | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | |
NP40N055EHE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) ?Lowinputcapacitance Ciss=1070pFTYP. ?Built-ingateprotectiondiode | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) ?Lowinputcapacitance Ciss=1070pFT | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) ?Lowinputcapacitance Ciss=1070pFTYP. ?Built-ingateprotectiondiode | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) ?Lowinputcapacitance Ciss=1070pFT | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=23mΩMAX.(VGS=10V,ID=20A) ?Lowinputcapacitance Ciss=1070pFTYP. ?Built-ingateprotectiondiode | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SWITCHING N-CHANNEL POWER MOS FET | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SWITCHING N-CHANNEL POWER MOS FET | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SWITCHING N-CHANNEL POWER MOS FET | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=40A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=23mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC |
詳細(xì)參數(shù)
- 型號:
NP40N055EHE
- 功能描述:
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 40A I(D) | TO-263AB
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
NEC |
1415+ |
TO-263 |
28500 |
全新原裝正品,優(yōu)勢熱賣 |
詢價 | ||
NEC |
21+ |
TO-263 |
30000 |
只做正品原裝現(xiàn)貨 |
詢價 | ||
NEC |
23+ |
TO-263 |
33000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
NEC |
03+ |
TO-263 |
200 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
NEC |
589220 |
16余年資質(zhì) 絕對原盒原盤 更多數(shù)量 |
詢價 | ||||
NEC |
2023+ |
TO-263 |
8800 |
正品渠道現(xiàn)貨 終端可提供BOM表配單。 |
詢價 | ||
NEC |
23+ |
原裝正品現(xiàn)貨 |
10000 |
TO-263 |
詢價 | ||
NEC |
23+ |
TO-263 |
11805 |
全新原裝 |
詢價 | ||
NEC |
24+ |
TO-263 |
8866 |
詢價 | |||
NEC |
6000 |
面議 |
19 |
TO-263 |
詢價 |
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