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IXFH60N25Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=60A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=47mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH60N25Q

HiPerFETPowerMOSFETsQ-Class

N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr LowGateChargeandCapacitances Features ?Lowgatecharge ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Avalanche

IXYS

IXYS Corporation

IXFK60N25Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=60A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=47mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFK60N25Q

HiPerFETPowerMOSFETsQ-Class

N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr LowGateChargeandCapacitances Features ?Lowgatecharge ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Avalanche

IXYS

IXYS Corporation

IXFP60N25

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=23mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andPFCCircuits..

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFQ60N25

iscN-ChannelMOSFETTransistor

FEATURES DrainCurrent-ID=60A@TC=25℃ DrainSourceVoltage-VDSS=250V(Min) StaticDrain-SourceOn-Resistance -RDS(on)=23mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFT60N25Q

HiPerFETPowerMOSFETsQ-Class

N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr LowGateChargeandCapacitances Features ?Lowgatecharge ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Avalanche

IXYS

IXYS Corporation

IXTH60N25

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=46mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andHighPowerdensity

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTH60N25

N-ChannelEnhancementMode

IXYS

IXYS Corporation

IXTT60N25

N-ChannelEnhancementMode

IXYS

IXYS Corporation

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
FAIRCHLD
23+
2800
正品原裝貨價(jià)格低
 詢價(jià)
TOSHIBA
23+
TO-264
3000
全新原裝
 詢價(jià)
TOSHIBA
23+
TO-3P
9526
詢價(jià)
HITACHI/日立
23+
60N321
45000
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道。可提供大量庫存,詳
 詢價(jià)
TOSHIBA原裝專賣價(jià)格
2023+
原裝
8700
原裝現(xiàn)貨
 詢價(jià)
S
23+
SOT-252
10000
公司只做原裝正品
 詢價(jià)
ST/意法
23+
TO-251
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
S
SOT-252
22+
6000
十年配單,只做原裝
 詢價(jià)
ST/意法
22+
TO-251
9800
只做原裝正品假一賠十!正規(guī)渠道訂貨!
 詢價(jià)
ST
TO-251
608900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
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更多60N25供應(yīng)商 更新時(shí)間2025-1-11 10:30:00

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