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6186

Precision Potentiometer / Position Sensor

BITECHBi technologies

瑞谷拜特上海瑞谷拜特軟件技術(shù)有限公司

6186

包裝:包裝卡 類別:測試與計(jì)量 測試引線 - 套件,分類 描述:KIT WAVETEK XL \u0026 XT DMM

POMONA

Pomona Electronics

6186

包裝:包裝卡 類別:測試與計(jì)量 測試引線 - 套件,分類 描述:KIT WAVETEK XL \u0026 XT DMM

POMONA

Pomona Electronics

61861455030

包裝:盒 類別:工具 磨料和表面修整產(chǎn)品 描述:GEN PURPOSE UNITIZD WHEEL 5A MED

3M

3M Electronics

AIC6186

0.5ADualUSBHigh-SidePowerSwitch

AIC

AIC Inc.(Advanced Industrial Computer, Inc.)

AOZ6186

High-SpeedUSB2.0(480Mbps)DPDTSwitch

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

CEB6186

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,33A,RDS(ON)=23mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB6186A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,33A,RDS(ON)=20mW@VGS=10V SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=25mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED6186

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,28A,RDS(ON)=23mΩ@VGS=10V. RDS(ON)=38mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED6186A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,30.6A,RDS(ON)=20mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=25mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM6186

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,8A,RDS(ON)=26mΩ@VGS=10V. RDS(ON)=40mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM6186

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,8A,RDS(ON)=26mW@VGS=10V. RDS(ON)=40mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM6186A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,8.1A,RDS(ON)=21mW@VGS=10V. RDS(ON)=28mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP6186

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,33A,RDS(ON)=23mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP6186A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,33A,RDS(ON)=20mW@VGS=10V SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=25mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU6186

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,28A,RDS(ON)=23mΩ@VGS=10V. RDS(ON)=38mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU6186A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,30.6A,RDS(ON)=20mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=25mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEZC6186

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,24A,RDS(ON)=24mW@VGS=10V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. RDS(ON)=30mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEZC6186A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,26A,RDS(ON)=20.5mW@VGS=10V. RDS(ON)=28mW@VGS=4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

FP6186

2A,23V,1.4MHzStep-DownConverter

FEELINGFeeling Technology Corp.

遠(yuǎn)翔科技遠(yuǎn)翔科技股份有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號:

    6186

  • 制造商:

    Pomona Electronics

  • 類別:

    測試與計(jì)量 > 測試引線 - 套件,分類

  • 系列:

    6186

  • 包裝:

    包裝卡

  • 套件類型:

    DMM 套件

  • 內(nèi)含物:

    短頭鱷魚夾,測試引線,測試探針

  • 描述:

    KIT WAVETEK XL \u0026 XT DMM

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REI
16+
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更多6186供應(yīng)商 更新時(shí)間2025-1-13 16:55:00