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BUK4D110-20P

Marking：6N；Package：DFN2020MD-6；20 V, P-channel Trench MOSFET

1.Generaldescription P-channelenhancementmodeField-EffectTransistor(FET)inamediumpowerDFN2020MD-6 (SOT1220)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits ?ExtendedtemperaturerangeTj=175°C ?TrenchMOSFETtechnology

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

D26V0S1U3LP20-7

Marking：6N；Package：U-DFN2020-3；1 CHANNEL HIGH SURGE TVS DIODE

Features ?ProvidesESDProtectionperIEC61000-4-2Standard: Air±30kV,Contact±30kV ?OneChannelofESDProtection ?LowChannelInputCapacitance ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) ?Forautomotiveapplications

DIODES

Diodes Incorporated

DTA622

Marking：6N；Package：SC-89；Bias Resistor Transistors

BiasResistorTransistors PNPSiliconSurfaceMountTransistors withMonolithicBiasResistorNetwork Thisnewseriesofdigitaltransistorsisdesignedtoreplaceasingledeviceanditsexternalresistorbiasnetwork.TheBRT(BiasResistorTransistor)containsasingletransistorwithamono

FS

First Silicon Co., Ltd

LDTA115EET1G

Marking：6N；Package：SC-89；Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

BiasResistorTransistors PNPSiliconSurfaceMountTransistors withMonolithicBiasResistorNetwork Thisnewseriesofdigitaltransistorsisdesignedtoreplaceasingledeviceanditsexternalresistorbiasnetwork.TheBRT(BiasResistorTransistor)containsasingletransistorwithamono

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

LDTA115EET1G

Marking：6N；Package：SC-89；Bias Resistor Transistors

BiasResistorTransistors PNPSiliconSurfaceMountTransistors withMonolithicBiasResistorNetwork Thisnewseriesofdigitaltransistorsisdesignedtoreplaceasingledeviceanditsexternalresistorbiasnetwork.TheBRT(BiasResistorTransistor)containsasingletransistorwithamono

LRCLeshan Radio Company

樂(lè)山無(wú)線(xiàn)電樂(lè)山無(wú)線(xiàn)電股份有限公司

NHUMD9

Marking：6N；Package：SOT363；80 V, 100 mA NPN/PNP resistor-equipped double transistors

Featuresandbenefits ?100mAoutputcurrentcapability ?Highbreakdownvoltage ?Built-inresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducespickandplacecosts ?AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

NHUMD9

Marking：6N；Package：SC-88；80 V, 100 mA NPN/PNP resistor-equipped double transistors

1.Generaldescription NPN/PNPResistor-EquippeddoubleTransistors(RET)familyinaverysmallSOT363(SC-88) Surface-MountedDevice(SMD)plasticpackage. Table1.Productoverview TypenumberR1R2Package kΩkΩNexperiaJEITA NPN/NPN complement: PNP/PNP complement: NHUMD102.247NH

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PEMD24

Marking：6N；Package：SOT666；50 V, 20 mA NPN/PNP resistor-equipped double transistor; R1 = 100 kΩ, R2 = 100 kΩ

1.Generaldescription NPN/PNPResistor-EquippeddoubleTransistor(RET)inanultrasmallflatleadSOT666Surface- MountedDevice(SMD)plasticpackage. PNP/PNPcomplement:PEMB24 2.Featuresandbenefits ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

UPC3237TK-E2

Marking：6N；Package：PKG；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES ?Supplyvoltage:VCC=2.4to3.3V(2.8VTYP.) ?Lowcurrentconsumption:ICC=5mATYP.@VCC=2.8V ?LowNoise:NF=1.4dBTYP.@f=470MHz :NF=1.5dBTYP.@f=770MHz ?Powergain:GP=15.3dBTYP.@f=470MHz :GP=13.5dBTYP.@f=770MHz ?High-density

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPC3237TK-E2-A

Marking：6N；Package：PKG；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES ?Supplyvoltage:VCC=2.4to3.3V(2.8VTYP.) ?Lowcurrentconsumption:ICC=5mATYP.@VCC=2.8V ?LowNoise:NF=1.4dBTYP.@f=470MHz :NF=1.5dBTYP.@f=770MHz ?Powergain:GP=15.3dBTYP.@f=470MHz :GP=13.5dBTYP.@f=770MHz ?High-density

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

替換型號(hào)

詳細(xì)參數(shù)

  • 型號(hào)：

    6N

  • 制造商：

    MISCELLANEOUS

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Mot
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Switchcraft
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SWITCHCRAFT
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KEYSTONE
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73
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更多6N供應(yīng)商 更新時(shí)間2025-3-1 15:00:00

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