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IXFH6N100Q

HiPerFETPowerMOSFETsQ-Class

Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●MoldingepoxiesmeetUL94V-0 flammabilityclassification Advantages ●

IXYS

IXYS Corporation

IXFM6N100

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFM6N100

HiPerFETPowerMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFT6N100F

PowerMOSFETs

Features ●RFcapableMOSFETs ●Doublemetalprocessforlowgateresistance ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●Fastintrinsicrectifier Applications ●DC-DCconverters ●Switch

IXYS

IXYS Corporation

IXFT6N100Q

HiPerFETPowerMOSFETsQ-Class

Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●MoldingepoxiesmeetUL94V-0 flammabilityclassification Advantages ●

IXYS

IXYS Corporation

MTH6N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTV6N100E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTV6N100E

PowerFieldEffectTransistor

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MTV6N100E

TMOSPOWERFET6.0AMPERES1000VOLTSRDS(on)=1.5OHM

TMOSE-FET? PowerFieldEffectTransistorD3PAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate TheD3PAKpackagehasthecapabilityofhousingthelargestchipsizeofanystandard,plastic,surfacemountpowersemiconductor.Thisallowsittobeusedinapplicationsthatrequiresur

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTW6N100

TMOSPOWERFET6.0AMPERES1000VOLTSRDS(on)=1.5OHM

TMOSE?FETPowerFieldEffectTransistorTO-247withIsolatedMountingHole N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMO

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

詳細參數(shù)

  • 型號：

    6N100F

  • 制造商：

    IXYS

  • 制造商全稱：

    IXYS Corporation

  • 功能描述：

    Power MOSFETs

供應商型號品牌批號封裝庫存備注價格
IXYS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
UTC/友順
SOT-223SOP8TO252
22+
6000
十年配單,只做原裝
 詢價
UCT
23+
SOT22-3
5000
原廠授權代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳
 詢價
UTC/友順
20+
SOT-223
32500
現(xiàn)貨很近!原廠很遠!只做原裝
 詢價
UTC
23+
SOT-223
76456
原裝正品現(xiàn)貨
 詢價
UTC/友順
24+
SOT-223
9600
原裝現(xiàn)貨,優(yōu)勢供應,支持實單!
 詢價
UTC/友順
23+
SOT-223
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
UTC/友順
22+
SOT-223
100000
代理渠道/只做原裝/可含稅
 詢價
UTC/友順
24+
NA/
10000
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價
UTC/友順
2022+
SOT-223
30000
進口原裝現(xiàn)貨供應,原裝 假一罰十
 詢價
更多6N100F供應商 更新時間2025-4-23 9:01:00

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