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71V016SA12YGI

3.3V CMOS Static RAM 1 Meg (64K x 16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V016SA12YGI

3.3V CMOS Static RAM

IDT

Integrated Device Technology, Inc.

71V016SA12YGI

包裝：托盤 封裝/外殼：44-BSOJ（0.400"，10.16mm 寬） 類別：集成電路（IC） 存儲器 描述：IC SRAM 1MBIT PARALLEL 44SOJ

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

71V016SA12YGI8

3.3V CMOS Static RAM 1 Meg (64K x 16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V016SA12YGI8

3.3V CMOS Static RAM

IDT

Integrated Device Technology, Inc.

71V016SA12YGI8

包裝：托盤 封裝/外殼：44-BSOJ（0.400"，10.16mm 寬） 類別：集成電路（IC） 存儲器 描述：IC SRAM 1MBIT PARALLEL 44SOJ

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

71V016SA12BF

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V016SA12BFG

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V016SA12BFG

3.3VCMOSStaticRAM

IDT

Integrated Device Technology, Inc.

71V016SA12BFGI

3.3VCMOSStaticRAM

IDT

Integrated Device Technology, Inc.

71V016SA12BFGI

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V016SA12BFI

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V016SA12PHG

3.3VCMOSStaticRAM

IDT

Integrated Device Technology, Inc.

71V016SA12PHG

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V016SA12PHGI

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V016SA12PHGI

3.3VCMOSStaticRAM

IDT

Integrated Device Technology, Inc.

71V016SA12YG

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V016SA12YG

3.3VCMOSStaticRAM

IDT

Integrated Device Technology, Inc.

IDT71V016SA12PHG

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Description TheIDT71V016isa1,048,576-bithigh-speedStaticRAMorganizedas64Kx16.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDT

Integrated Device Technology, Inc.

產(chǎn)品屬性

  • 產(chǎn)品編號：

    71V016SA12YGI

  • 制造商：

    Renesas Electronics America Inc

  • 類別：

    集成電路（IC） > 存儲器

  • 包裝：

    托盤

  • 存儲器類型：

    易失

  • 存儲器格式：

    SRAM

  • 技術：

    SRAM - 異步

  • 存儲容量：

    1Mb（64K x 16）

  • 存儲器接口：

    并聯(lián)

  • 寫周期時間 - 字，頁：

    12ns

  • 電壓 - 供電：

    3V ~ 3.6V

  • 工作溫度：

    -40°C ~ 85°C（TA）

  • 安裝類型：

    表面貼裝型

  • 封裝/外殼：

    44-BSOJ（0.400"，10.16mm 寬）

  • 供應商器件封裝：

    44-SOJ

  • 描述：

    IC SRAM 1MBIT PARALLEL 44SOJ

供應商型號品牌批號封裝庫存備注價格
RENESAS(瑞薩)/IDT
2022+原裝正品
SOJ-44
18000
支持工廠BOM表配單 公司只做原裝正品貨
 詢價
IDT, Integrated Device Technol
24+
44-SOJ
56200
一級代理/放心采購
 詢價
RENESAS(瑞薩)/IDT
1921+
SOJ-44
3575
向鴻倉庫現(xiàn)貨,優(yōu)勢絕對的原裝!
 詢價
IDT
1931+
N/A
1186
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
RENESAS(瑞薩)/IDT
2117+
SOJ-44
315000
16個/管一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期
 詢價
IDT
20+
SOP-44
256
就找我吧!--邀您體驗愉快問購元件!
 詢價
RENESAS(瑞薩)/IDT
2021+
SOJ-44
499
詢價
IDT
22+
NA
1186
加我QQ或微信咨詢更多詳細信息,
 詢價
RENESAS(瑞薩)/IDT
23+
SOJ44
7350
現(xiàn)貨供應,當天可交貨!免費送樣,原廠技術支持!!!
 詢價
RENESAS(瑞薩)/IDT
23+
SOJ44
6000
誠信服務，絕對原裝原盤
 詢價
更多71V016SA12YGI供應商 更新時間2025-1-4 8:24:00

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