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71V3556SA

128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V3556SA100BG

128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V3556SA100BG8

128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V3556SA100BGG

128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V3556SA100BGG8

128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V3556SA100BGGI

128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V3556SA100BGGI8

128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V3556SA100BGI

128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V3556SA100BGI8

128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V3556SA100BQ

128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細參數

  • 型號:

    71V3556SA

  • 功能描述:

    靜態(tài)隨機存取存儲器 128Kx36 SYNC 3.3V ZBT PIPELINED 靜態(tài)隨機存取存儲器

  • RoHS:

  • 制造商:

    Cypress Semiconductor

  • 存儲容量:

    16 Mbit

  • 組織:

    1 M x 16

  • 訪問時間:

    55 ns

  • 電源電壓-最大:

    3.6 V

  • 電源電壓-最?。?/span>

    2.2 V

  • 最大工作電流:

    22 uA

  • 最大工作溫度:

    + 85 C

  • 最小工作溫度:

    - 40 C

  • 安裝風格:

    SMD/SMT

  • 封裝/箱體:

    TSOP-48

  • 封裝:

    Tray

供應商型號品牌批號封裝庫存備注價格
IDT
23+
NA
407
專做原裝正品,假一罰百!
詢價
IDT, Integrated Device Technol
21+
119-BGA
5280
進口原裝!長期供應!絕對優(yōu)勢價格(誠信經營
詢價
IDT, Integrated Device Technol
24+
119-PBGA(14x22)
56200
一級代理/放心采購
詢價
RENESAS(瑞薩)/IDT
1921+
PBGA-119(14x22)
3575
向鴻倉庫現貨,優(yōu)勢絕對的原裝!
詢價
IDT
1931+
N/A
1186
加我qq或微信,了解更多詳細信息,體驗一站式購物
詢價
RENESAS(瑞薩)/IDT
2447
PBGA-119(14x22)
315000
84個/托盤一級代理專營品牌!原裝正品,優(yōu)勢現貨,長
詢價
IDT
20+
BGA-165
2000
就找我吧!--邀您體驗愉快問購元件!
詢價
Renesas
21+
25000
原廠原包 深圳現貨 主打品牌 假一賠百 可開票!
詢價
RENESAS(瑞薩)/IDT
2021+
PBGA-119(14x22)
499
詢價
RENESAS(瑞薩電子)
22+
NA
500000
萬三科技,秉承原裝,購芯無憂
詢價
更多71V3556SA供應商 更新時間2025-3-1 17:00:00