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71V35761S166BGG

包裝：托盤 封裝/外殼：119-BGA 類別：集成電路（IC） 存儲(chǔ)器 描述：IC SRAM 4.5MBIT PARALLEL 119PBGA

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

71V35761S166BGGI

包裝：托盤 封裝/外殼：119-BGA 類別：集成電路（IC） 存儲(chǔ)器 描述：IC SRAM 4.5MBIT PARALLEL 119PBGA

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

71V35761S166BGGI8

包裝：托盤 封裝/外殼：119-BGA 類別：集成電路（IC） 存儲(chǔ)器 描述：IC SRAM 4.5MBIT PARALLEL 119PBGA

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

71V35761S166PFG

128Kx363.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Features ◆128Kx36memoryconfigurations ◆Supportshighsystemspeed: Commercial: –200MHz3.1nsclockaccesstime CommercialandIndustrial: –183MHz3.3nsclockaccesstime –166MHz3.5nsclockaccesstime ◆LBOinputselectsinterleavedorlinearburstmode ◆3.3Vcorepowersupply

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V35761S166PFGI

128Kx363.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Features ◆128Kx36memoryconfigurations ◆Supportshighsystemspeed: Commercial: –200MHz3.1nsclockaccesstime CommercialandIndustrial: –183MHz3.3nsclockaccesstime –166MHz3.5nsclockaccesstime ◆LBOinputselectsinterleavedorlinearburstmode ◆3.3Vcorepowersupply

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IDT71V35761S166BG

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

IDT71V35761S166BGG

3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V35761S166BGGI

3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V35761S166BGI

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

IDT71V35761S166BQ

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

IDT71V35761S166BQG

3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V35761S166BQGI

3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V35761S166BQI

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

IDT71V35761S166PF

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

IDT71V35761S166PFG

3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V35761S166PFGI

3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V35761S166PFI

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    71V35761S166BGG

  • 制造商：

    Renesas Electronics America Inc

  • 類別：

    集成電路（IC） > 存儲(chǔ)器

  • 包裝：

    托盤

  • 存儲(chǔ)器類型：

    易失

  • 存儲(chǔ)器格式：

    SRAM

  • 技術(shù)：

    SRAM - 同步，SDR

  • 存儲(chǔ)容量：

    4.5Mb（128K x 36）

  • 存儲(chǔ)器接口：

    并聯(lián)

  • 電壓 - 供電：

    3.135V ~ 3.465V

  • 工作溫度：

    0°C ~ 70°C（TA）

  • 安裝類型：

    表面貼裝型

  • 封裝/外殼：

    119-BGA

  • 供應(yīng)商器件封裝：

    119-PBGA（14x22）

  • 描述：

    IC SRAM 4.5MBIT PARALLEL 119PBGA

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IDT, Integrated Device Technol
21+
100-VFBGA
5280
進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng)
 詢價(jià)
IDT, Integrated Device Technol
24+
119-PBGA(14x22)
56200
一級(jí)代理/放心采購(gòu)
 詢價(jià)
IDT
20+
BGA-119
1001
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
 詢價(jià)
Renesas Electronics Corporatio
23+/24+
119-BGA
8600
只供原裝進(jìn)口公司現(xiàn)貨+可訂貨
 詢價(jià)
Renesas Electronics America In
24+
119-BGA
9350
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
 詢價(jià)
24+
N/A
64000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
 詢價(jià)
IDT
21+
QFN
5
原裝現(xiàn)貨假一賠十
 詢價(jià)
IDT
23+
QFN
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
IDT
22+
QFN
25000
原裝現(xiàn)貨,價(jià)格優(yōu)惠,假一罰十
 詢價(jià)
IDT
01+
QFN
5
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
更多71V35761S166BGG供應(yīng)商 更新時(shí)間2024-12-29 13:01:00

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