首頁(yè) >71V35761S166PFGI>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
71V35761S166PFGI | 128K x 36 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Features ◆128Kx36memoryconfigurations ◆Supportshighsystemspeed: Commercial: –200MHz3.1nsclockaccesstime CommercialandIndustrial: –183MHz3.3nsclockaccesstime –166MHz3.5nsclockaccesstime ◆LBOinputselectsinterleavedorlinearburstmode ◆3.3Vcorepowersupply | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | |
71V35761S166PFGI | 包裝:托盤 封裝/外殼:100-LQFP 類別:集成電路(IC) 存儲(chǔ)器 描述:IC SRAM 4.5MBIT PARALLEL 100TQFP | Renesas Electronics America Inc Renesas Electronics America Inc | Renesas Electronics America Inc | |
128K x 36 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Features ◆128Kx36memoryconfigurations ◆Supportshighsystemspeed: Commercial: –200MHz3.1nsclockaccesstime CommercialandIndustrial: –183MHz3.3nsclockaccesstime –166MHz3.5nsclockaccesstime ◆LBOinputselectsinterleavedorlinearburstmode ◆3.3Vcorepowersupply | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
包裝:管件 封裝/外殼:100-LQFP 類別:集成電路(IC) 存儲(chǔ)器 描述:IC SRAM 4.5MBIT PARALLEL 100TQFP | Renesas Electronics America Inc Renesas Electronics America Inc | Renesas Electronics America Inc | ||
128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec | IDT Integrated Device Technology, Inc. | IDT | ||
3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect | IDT Integrated Device Technology, Inc. | IDT | ||
3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect | IDT Integrated Device Technology, Inc. | IDT | ||
128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec | IDT Integrated Device Technology, Inc. | IDT | ||
128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec | IDT Integrated Device Technology, Inc. | IDT | ||
3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect | IDT Integrated Device Technology, Inc. | IDT | ||
3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect | IDT Integrated Device Technology, Inc. | IDT | ||
128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec | IDT Integrated Device Technology, Inc. | IDT | ||
128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec | IDT Integrated Device Technology, Inc. | IDT | ||
3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect | IDT Integrated Device Technology, Inc. | IDT | ||
3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect | IDT Integrated Device Technology, Inc. | IDT | ||
128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec | IDT Integrated Device Technology, Inc. | IDT |
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
71V35761S166PFGI
- 制造商:
Renesas Electronics America Inc
- 類別:
集成電路(IC) > 存儲(chǔ)器
- 包裝:
托盤
- 存儲(chǔ)器類型:
易失
- 存儲(chǔ)器格式:
SRAM
- 技術(shù):
SRAM - 同步,SDR
- 存儲(chǔ)容量:
4.5Mb(128K x 36)
- 存儲(chǔ)器接口:
并聯(lián)
- 電壓 - 供電:
3.135V ~ 3.465V
- 工作溫度:
-40°C ~ 85°C(TA)
- 安裝類型:
表面貼裝型
- 封裝/外殼:
100-LQFP
- 供應(yīng)商器件封裝:
100-TQFP(14x14)
- 描述:
IC SRAM 4.5MBIT PARALLEL 100TQFP
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IDT |
24+ |
TQFP |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價(jià) | ||
IDT, Integrated Device Technol |
24+ |
100-TQFP(14x14) |
56200 |
一級(jí)代理/放心采購(gòu) |
詢價(jià) | ||
IDT |
1931+ |
N/A |
1186 |
加我qq或微信,了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物 |
詢價(jià) | ||
IDT |
2021+ |
SMD |
100500 |
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨 |
詢價(jià) | ||
IDT |
20+ |
QFP-100 |
144 |
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件! |
詢價(jià) | ||
IDT, Integrated Device Technol |
21+ |
NA |
11200 |
正品專賣,進(jìn)口原裝深圳現(xiàn)貨 |
詢價(jià) | ||
Renesas |
21+ |
25000 |
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開(kāi)票! |
詢價(jià) | |||
RENESAS(瑞薩電子) |
22+ |
NA |
500000 |
萬(wàn)三科技,秉承原裝,購(gòu)芯無(wú)憂 |
詢價(jià) | ||
IDT |
23+ |
TQFP |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
IDT |
22+ |
NA |
1186 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價(jià) |
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