首頁 >IDT71V35761S166PF>規(guī)格書列表

零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

IDT71V35761S166PF

128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

IDT71V35761S166PF

包裝：托盤 封裝/外殼：100-LQFP 類別：集成電路（IC） 存儲器 描述：IC SRAM 4.5MBIT PARALLEL 100TQFP

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IDT71V35761S166PFI

128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

IDT71V35761S166PFG

3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

IDT

Integrated Device Technology, Inc.

IDT71V35761S166PFG8

3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

IDT

Integrated Device Technology, Inc.

IDT71V35761S166PFGI

3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

IDT

Integrated Device Technology, Inc.

IDT71V35761S166PFGI8

3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

IDT

Integrated Device Technology, Inc.

IDT71V35761S166PFI

包裝：托盤 封裝/外殼：100-LQFP 類別：集成電路（IC） 存儲器 描述：IC SRAM 4.5MBIT PARALLEL 100TQFP

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IDT71V35761S166PFI8

包裝：托盤 封裝/外殼：100-LQFP 類別：集成電路（IC） 存儲器 描述：IC SRAM 4.5MBIT PARALLEL 100TQFP

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V35761S166PFG

128Kx363.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Features ◆128Kx36memoryconfigurations ◆Supportshighsystemspeed: Commercial: –200MHz3.1nsclockaccesstime CommercialandIndustrial: –183MHz3.3nsclockaccesstime –166MHz3.5nsclockaccesstime ◆LBOinputselectsinterleavedorlinearburstmode ◆3.3Vcorepowersupply

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V35761S166PFGI

128Kx363.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Features ◆128Kx36memoryconfigurations ◆Supportshighsystemspeed: Commercial: –200MHz3.1nsclockaccesstime CommercialandIndustrial: –183MHz3.3nsclockaccesstime –166MHz3.5nsclockaccesstime ◆LBOinputselectsinterleavedorlinearburstmode ◆3.3Vcorepowersupply

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IDT71V35761S166BG

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

IDT71V35761S166BGG

3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V35761S166BGGI

3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V35761S166BGI

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

IDT71V35761S166BQ

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

IDT71V35761S166BQG

3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V35761S166BQGI

3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V35761S166BQI

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

產(chǎn)品屬性

  • 產(chǎn)品編號：

    IDT71V35761S166PF

  • 制造商：

    Renesas Electronics America Inc

  • 類別：

    集成電路（IC） > 存儲器

  • 包裝：

    托盤

  • 存儲器類型：

    易失

  • 存儲器格式：

    SRAM

  • 技術(shù)：

    SRAM - 同步，SDR

  • 存儲容量：

    4.5Mb（128K x 36）

  • 存儲器接口：

    并聯(lián)

  • 電壓 - 供電：

    3.135V ~ 3.465V

  • 工作溫度：

    0°C ~ 70°C（TA）

  • 安裝類型：

    表面貼裝型

  • 封裝/外殼：

    100-LQFP

  • 供應(yīng)商器件封裝：

    100-TQFP（14x14）

  • 描述：

    IC SRAM 4.5MBIT PARALLEL 100TQFP

供應(yīng)商型號品牌批號封裝庫存備注價格
IDT
2023+
QFP
53500
正品,原裝現(xiàn)貨
 詢價
IDT
22+
QFP
3345
⊙⊙新加坡大量現(xiàn)貨庫存,深圳常備現(xiàn)貨!歡迎查詢!⊙
 詢價
IDT
00/01+
QFP
2240
全新原裝100真實現(xiàn)貨供應(yīng)
 詢價
IDT
23+
100TQFP
9526
詢價
IDT
24+
QFP
503
詢價
IDT
2016+
TQFP-100
8880
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
IDT
23+
100-TQFP(14x14)
9550
專業(yè)分銷產(chǎn)品!原裝正品!價格優(yōu)勢!
 詢價
IDT
2339+
TQFP-100
5825
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
 詢價
IDT
23+
TQFP-100
9960
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
 詢價
IDT
2021+
BGA
2839
只做原裝假一罰十
 詢價
更多IDT71V35761S166PF供應(yīng)商 更新時間2024-11-7 16:23:00

相關(guān)規(guī)格書

更多

相關(guān)庫存

更多