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IDT71V35761S166PFGI

3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

IDT

Integrated Device Technology, Inc.

IDT71V35761S166PFGI8

3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

IDT

Integrated Device Technology, Inc.

71V35761S166PFG

128Kx363.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Features ◆128Kx36memoryconfigurations ◆Supportshighsystemspeed: Commercial: –200MHz3.1nsclockaccesstime CommercialandIndustrial: –183MHz3.3nsclockaccesstime –166MHz3.5nsclockaccesstime ◆LBOinputselectsinterleavedorlinearburstmode ◆3.3Vcorepowersupply

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V35761S166PFGI

128Kx363.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Features ◆128Kx36memoryconfigurations ◆Supportshighsystemspeed: Commercial: –200MHz3.1nsclockaccesstime CommercialandIndustrial: –183MHz3.3nsclockaccesstime –166MHz3.5nsclockaccesstime ◆LBOinputselectsinterleavedorlinearburstmode ◆3.3Vcorepowersupply

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IDT71V35761S166BG

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

IDT71V35761S166BGG

3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V35761S166BGGI

3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V35761S166BGI

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

IDT71V35761S166BQ

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

IDT71V35761S166BQG

3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V35761S166BQGI

3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V35761S166BQI

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

IDT71V35761S166PF

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

IDT71V35761S166PFG

3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V35761S166PFI

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

詳細參數(shù)

  • 型號：

    IDT71V35761S166PFGI

  • 功能描述：

    IC SRAM 4MBIT 166MHZ 100TQFP

  • RoHS：

    是

  • 類別：

    集成電路(IC) >> 存儲器

  • 系列：

    -

  • 標準包裝：

    2,000

  • 系列：

    MoBL® 格式 -

  • 存儲器：

    RAM

  • 存儲器類型：

    SRAM - 異步

  • 存儲容量：

    16M（2M x 8，1M x 16）

  • 速度：

    45ns

  • 接口：

    并聯(lián)

  • 電源電壓：

    2.2 V ~ 3.6 V

  • 工作溫度：

    -40°C ~ 85°C

  • 封裝/外殼：

    48-VFBGA

  • 供應商設備封裝：

    48-VFBGA（6x8）

  • 包裝：

    帶卷(TR)

供應商型號品牌批號封裝庫存備注價格
IDT
23+
100-TQFP(14x14)
1389
專業(yè)分銷產(chǎn)品!原裝正品!價格優(yōu)勢!
 詢價
IDT
22+
100TQFP
9000
原廠渠道,現(xiàn)貨配單
 詢價
IDT
21+
100TQFP
13880
公司只售原裝,支持實單
 詢價
IDT
23+
100TQFP
9000
原裝正品，支持實單
 詢價
xilinx
22+
TQFP
6800
詢價
xilinx
23+
TQFP
8000
全新原裝
 詢價
IDT
24+
BGA
6500
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
IDT
24+
100-TQFP
5767
原裝現(xiàn)貨
 詢價
IDT
23+
100TQFP
9526
詢價
IDT
22+
QFP
3013
⊙⊙新加坡大量現(xiàn)貨庫存,深圳常備現(xiàn)貨!歡迎查詢!⊙
 詢價
更多IDT71V35761S166PFGI供應商 更新時間2025-1-1 16:30:00

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