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IDT71V35761S200PFI

128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

IDT71V35761S200PFI

Package：100-LQFP；包裝：托盤 類別：集成電路（IC） 存儲器 描述：IC SRAM 4.5MBIT PARALLEL 100TQFP

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

IDT71V35761S200PFI8

Package：100-LQFP；包裝：托盤 類別：集成電路（IC） 存儲器 描述：IC SRAM 4.5MBIT PARALLEL 100TQFP

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

71V35761S200PFG

128Kx363.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Features ◆128Kx36memoryconfigurations ◆Supportshighsystemspeed: Commercial: –200MHz3.1nsclockaccesstime CommercialandIndustrial: –183MHz3.3nsclockaccesstime –166MHz3.5nsclockaccesstime ◆LBOinputselectsinterleavedorlinearburstmode ◆3.3Vcorepowersupply

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IDT71V35761S200BG

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

IDT71V35761S200BGG

3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V35761S200BGGI

3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V35761S200BGI

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

IDT71V35761S200BQ

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

IDT71V35761S200BQG

3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

產品屬性

  • 產品編號：

    IDT71V35761S200PFI

  • 制造商：

    Renesas Electronics America Inc

  • 類別：

    集成電路（IC） > 存儲器

  • 包裝：

    托盤

  • 存儲器類型：

    易失

  • 存儲器格式：

    SRAM

  • 技術：

    SRAM - 同步，SDR

  • 存儲容量：

    4.5Mb（128K x 36）

  • 存儲器接口：

    并聯

  • 電壓 - 供電：

    3.135V ~ 3.465V

  • 工作溫度：

    -40°C ~ 85°C（TA）

  • 安裝類型：

    表面貼裝型

  • 封裝/外殼：

    100-LQFP

  • 供應商器件封裝：

    100-TQFP（14x14）

  • 描述：

    IC SRAM 4.5MBIT PARALLEL 100TQFP

供應商型號品牌批號封裝庫存備注價格
IDT
23+
100TQFP
9526
詢價
IDT
23+
100-TQFP(14x14)
1389
專業(yè)分銷產品!原裝正品!價格優(yōu)勢!
 詢價
IDT
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IDT, Integrated Device Technol
24+
100-TQFP(14x14)
56200
一級代理/放心采購
 詢價
IDT
20+
QFP-100
1001
就找我吧!--邀您體驗愉快問購元件!
 詢價
IDT
22+
100TQFP
9000
原廠渠道,現貨配單
 詢價
IDT
21+
100TQFP
13880
公司只售原裝,支持實單
 詢價
IDT
23+
100TQFP
9000
原裝正品，支持實單
 詢價
IDT, Integrated Device Techno
23+
100-TQFP14x14
7300
專注配單,只做原裝進口現貨
 詢價
IDT, Integrated Device Techno
23+
100-TQFP14x14
7300
專注配單,只做原裝進口現貨
 詢價
更多IDT71V35761S200PFI供應商 更新時間2025-3-10 16:07:00

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