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IDT71V35761YS200BG

128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

IDT71V35761YS200BGI

128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

IDT71V35761YS200BQ

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

IDT71V35761YS200BQI

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

IDT71V35761YS200PF

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

IDT71V35761YS200PFI

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

詳細參數(shù)

  • 型號：

    IDT71V35761YS200BG

  • 功能描述：

    IC SRAM 4MBIT 200MHZ 119BGA

  • RoHS：

    否

  • 類別：

    集成電路(IC) >> 存儲器

  • 系列：

    -

  • 標準包裝：

    2,000

  • 系列：

    MoBL® 格式 -

  • 存儲器：

    RAM

  • 存儲器類型：

    SRAM - 異步

  • 存儲容量：

    16M（2M x 8，1M x 16）

  • 速度：

    45ns

  • 接口：

    并聯(lián)

  • 電源電壓：

    2.2 V ~ 3.6 V

  • 工作溫度：

    -40°C ~ 85°C

  • 封裝/外殼：

    48-VFBGA

  • 供應(yīng)商設(shè)備封裝：

    48-VFBGA（6x8）

  • 包裝：

    帶卷(TR)

供應(yīng)商型號品牌批號封裝庫存備注價格
IDT
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IDT
24+
119-BGA
3038
原裝現(xiàn)貨
 詢價
IDT
23+
100-TQFP(14x14)
39257
專業(yè)分銷產(chǎn)品!原裝正品!價格優(yōu)勢!
 詢價
IDT, Integrated Device Technol
21+
100-TQFP(14x14)
56200
一級代理/放心采購
 詢價
IDT
20+
QFP-100
1001
就找我吧!--邀您體驗愉快問購元件!
 詢價
IDT
22+
100TQFP
9000
原廠渠道,現(xiàn)貨配單
 詢價
IDT
21+
100TQFP
13880
公司只售原裝,支持實單
 詢價
IDT
23+
100TQFP
9000
原裝正品，支持實單
 詢價
IDT, Integrated Device Techno
23+
100-TQFP14x14
7300
專注配單,只做原裝進口現(xiàn)貨
 詢價
IDT, Integrated Device Techno
23+
100-TQFP14x14
7300
專注配單,只做原裝進口現(xiàn)貨
 詢價
更多IDT71V35761YS200BG供應(yīng)商 更新時間2024-11-7 16:06:00

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