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IDT71V35761S183PF

128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

IDT71V35761S183PF

包裝：托盤 封裝/外殼：100-LQFP 類別：集成電路（IC） 存儲器 描述：IC SRAM 4.5MBIT PARALLEL 100TQFP

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

IDT71V35761S183PFI

128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

IDT71V35761S183PFG

3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

IDT

Integrated Device Technology, Inc.

IDT71V35761S183PFG8

3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

IDT

Integrated Device Technology, Inc.

IDT71V35761S183PFGI

3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

IDT

Integrated Device Technology, Inc.

IDT71V35761S183PFGI8

3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

IDT

Integrated Device Technology, Inc.

IDT71V35761S183PFI

包裝：托盤 封裝/外殼：100-LQFP 類別：集成電路（IC） 存儲器 描述：IC SRAM 4.5MBIT PARALLEL 100TQFP

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

IDT71V35761S183PFI8

包裝：托盤 封裝/外殼：100-LQFP 類別：集成電路（IC） 存儲器 描述：IC SRAM 4.5MBIT PARALLEL 100TQFP

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

71V35761S183PFG

128Kx363.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Features ◆128Kx36memoryconfigurations ◆Supportshighsystemspeed: Commercial: –200MHz3.1nsclockaccesstime CommercialandIndustrial: –183MHz3.3nsclockaccesstime –166MHz3.5nsclockaccesstime ◆LBOinputselectsinterleavedorlinearburstmode ◆3.3Vcorepowersupply

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V35761S183PFGI

128Kx363.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Features ◆128Kx36memoryconfigurations ◆Supportshighsystemspeed: Commercial: –200MHz3.1nsclockaccesstime CommercialandIndustrial: –183MHz3.3nsclockaccesstime –166MHz3.5nsclockaccesstime ◆LBOinputselectsinterleavedorlinearburstmode ◆3.3Vcorepowersupply

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IDT71V35761S183BG

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

IDT71V35761S183BGG

3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V35761S183BGGI

3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V35761S183BGI

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

IDT71V35761S183BQ

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

IDT71V35761S183BQG

3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V35761S183BQGI

3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

IDT

Integrated Device Technology, Inc.

IDT71V35761S183BQI

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

產品屬性

  • 產品編號：

    IDT71V35761S183PF

  • 制造商：

    Renesas Electronics America Inc

  • 類別：

    集成電路（IC） > 存儲器

  • 包裝：

    托盤

  • 存儲器類型：

    易失

  • 存儲器格式：

    SRAM

  • 技術：

    SRAM - 同步，SDR

  • 存儲容量：

    4.5Mb（128K x 36）

  • 存儲器接口：

    并聯

  • 電壓 - 供電：

    3.135V ~ 3.465V

  • 工作溫度：

    0°C ~ 70°C（TA）

  • 安裝類型：

    表面貼裝型

  • 封裝/外殼：

    100-LQFP

  • 供應商器件封裝：

    100-TQFP（14x14）

  • 描述：

    IC SRAM 4.5MBIT PARALLEL 100TQFP

供應商型號品牌批號封裝庫存備注價格
IDT
23+
100TQFP
9526
詢價
IDT
24+
TQFP100
126
詢價
IDT
23+
100-TQFP(14x14)
73390
專業(yè)分銷產品!原裝正品!價格優(yōu)勢!
 詢價
IDT
01+
TQFP/100
126
原裝現貨海量庫存歡迎咨詢
 詢價
IDT
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IDT
2020+
TQFP/10
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
IDT, Integrated Device Technol
24+
100-TQFP(14x14)
56200
一級代理/放心采購
 詢價
IDT
20+
QFP-100
1001
就找我吧!--邀您體驗愉快問購元件!
 詢價
IDT
1922+
TQFP/100
8200
萊克訊原廠貨源每一片都來自原廠原裝現貨薄利多
 詢價
IDT
23+
TQFP100
50000
全新原裝正品現貨,支持訂貨
 詢價
更多IDT71V35761S183PF供應商 更新時間2025-1-1 15:12:00

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