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71V424S10PHGI

3.3V CMOS Static RAM

Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDT

Integrated Device Technology, Inc.

71V424S10PHGI

3.3V CMOS Static RAM 4 Meg (512K x 8-Bit)

Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V424S10PHGI

包裝：卷帶（TR） 封裝/外殼：44-TSOP（0.400"，10.16mm 寬） 類別：集成電路（IC） 存儲(chǔ)器 描述：IC SRAM 4MBIT PARALLEL 44TSOP II

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V424S10PHGI8

3.3V CMOS Static RAM

Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDT

Integrated Device Technology, Inc.

71V424S10PHGI8

3.3V CMOS Static RAM 4 Meg (512K x 8-Bit)

Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V424S10PHGI8

包裝：卷帶（TR） 封裝/外殼：44-TSOP（0.400"，10.16mm 寬） 類別：集成電路（IC） 存儲(chǔ)器 描述：IC SRAM 4MBIT PARALLEL 44TSOP II

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V424S10YG

3.3VCMOSStaticRAM4Meg(512Kx8-Bit)

Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V424S10YG

3.3VCMOSStaticRAM

Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDT

Integrated Device Technology, Inc.

71V424S10YGI

3.3VCMOSStaticRAM4Meg(512Kx8-Bit)

Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V424S10YGI

3.3VCMOSStaticRAM

Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDT

Integrated Device Technology, Inc.

IDT71V424S10PH

3.3VCMOSSTATICRAM4MEG(512Kx8-BIT)

DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDT

Integrated Device Technology, Inc.

IDT71V424S10PHG

3.3VCMOSSTATICRAM4MEG(512Kx8-BIT)

DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDT

Integrated Device Technology, Inc.

IDT71V424S10PHGI

3.3VCMOSSTATICRAM4MEG(512Kx8-BIT)

DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDT

Integrated Device Technology, Inc.

IDT71V424S10PHI

3.3VCMOSSTATICRAM4MEG(512Kx8-BIT)

DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDT

Integrated Device Technology, Inc.

IDT71V424S10Y

3.3VCMOSSTATICRAM4MEG(512Kx8-BIT)

DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDT

Integrated Device Technology, Inc.

IDT71V424S10YG

3.3VCMOSSTATICRAM4MEG(512Kx8-BIT)

DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDT

Integrated Device Technology, Inc.

IDT71V424S10YGI

3.3VCMOSSTATICRAM4MEG(512Kx8-BIT)

DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDT

Integrated Device Technology, Inc.

IDT71V424S10YI

3.3VCMOSSTATICRAM4MEG(512Kx8-BIT)

DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi

IDT

Integrated Device Technology, Inc.

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    71V424S10PHGI

  • 制造商：

    Renesas Electronics America Inc

  • 類別：

    集成電路（IC） > 存儲(chǔ)器

  • 包裝：

    卷帶（TR）

  • 存儲(chǔ)器類型：

    易失

  • 存儲(chǔ)器格式：

    SRAM

  • 技術(shù)：

    SRAM - 異步

  • 存儲(chǔ)容量：

    4Mb（512K x 8）

  • 存儲(chǔ)器接口：

    并聯(lián)

  • 寫周期時(shí)間 - 字，頁(yè)：

    10ns

  • 電壓 - 供電：

    3V ~ 3.6V

  • 工作溫度：

    -40°C ~ 85°C（TA）

  • 安裝類型：

    表面貼裝型

  • 封裝/外殼：

    44-TSOP（0.400"，10.16mm 寬）

  • 供應(yīng)商器件封裝：

    44-TSOP II

  • 描述：

    IC SRAM 4MBIT PARALLEL 44TSOP II

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
RENESAS(瑞薩)/IDT
2022+原裝正品
TSOPII-44
18000
支持工廠BOM表配單 公司只做原裝正品貨
 詢價(jià)
IDT
16+
原廠封裝
2000
原裝現(xiàn)貨假一罰十
 詢價(jià)
IDT
2023+
新
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
 詢價(jià)
IDT
2046+
9852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價(jià)
IDT, Integrated Device Technol
21+
44-TSOP II
56200
一級(jí)代理/放心采購(gòu)
 詢價(jià)
IDT
1931+
N/A
1186
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物
 詢價(jià)
RENESAS(瑞薩)/IDT
2117+
TSOPII-44
315000
135個(gè)/管一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期
 詢價(jià)
IDT
20+
TSOP-44
130
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
 詢價(jià)
Renesas
21+
25000
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開(kāi)票!
 詢價(jià)
RENESAS(瑞薩)/IDT
2021+
TSOPII-44
499
詢價(jià)
更多71V424S10PHGI供應(yīng)商 更新時(shí)間2024-10-27 15:00:00

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