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NP88N04CHE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7300pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP88N04CHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7300pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP88N04CHE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=88A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP88N04DHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7300pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP88N04DHE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=88A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP88N04DHE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7300pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP88N04EHE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7300pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP88N04EHE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=88A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP88N04EHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7300pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP88N04KHE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=88A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP88N04KHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7300pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP88N04KHE

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP88N04KHE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7300pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP88N04KUG

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP88N04MHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7300pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP88N04MHE

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP88N04MHE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7300pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP88N04MHE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=88A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP88N04NHE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=88A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP88N04NHE

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
NEC
24+
TO-262
1579
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NEC
23+
TO-220
5000
專做原裝正品,假一罰百!
 詢價(jià)
NEC
24+
TO-220
12000
原裝正品現(xiàn)貨
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NEC
24+
TO-262
16800
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!?
 詢價(jià)
FAIRCHILD/仙童
23+
DFN-63x3
69820
終端可以免費(fèi)供樣,支持BOM配單!
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NEC
22+
TO-220
5000
絕對(duì)全新原裝現(xiàn)貨
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NEC
23+
TO-220
27000
正品原裝貨價(jià)格低qq:2987726803
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NEC
23+
TO-262
6000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
NEC
23+
TO-262
6000
專注配單,只做原裝進(jìn)口現(xiàn)貨
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NEC
2022+
TO-220
57550
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更多88N04供應(yīng)商 更新時(shí)間2025-1-1 10:50:00

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