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AD-904

Flexible,lowcostandhighperformance

AXIOMTEKAxiomtek Co., Ltd.

艾訊科技艾訊股份有限公司

ADG904

Wideband,37dBIsolationat1GHz,CMOS1.65Vto2.75V,4:1Mux/SP4T

GENERALDESCRIPTION TheADG904andADG904-Rarewidebandanalog4:1multiplexersthatuseaCMOSprocesstoprovidehighisolationandlowinsertionlossto1GHz.TheADG904isanabsorptive/matchedmuxwith50Ωterminatedshuntlegs;theADG904-Risareflectivemux.Thesedevicesaredesign

ADAnalog Devices

亞德諾亞德諾半導體技術(shù)有限公司

ADG904BCPZ

Wideband2.5GHz,37dBIsolationat1GHz,CMOS1.65Vto2.75V,4:1Mux/SP4T

GENERALDESCRIPTION TheADG904andADG904-Rarewidebandanalog4:1multiplexersthatuseaCMOSprocesstoprovidehighisolationandlowinsertionlossto1GHz.TheADG904isanabsorptive/matchedmuxwith50Ωterminatedshuntlegs;theADG904-Risareflectivemux.Thesedevicesaredesign

ADAnalog Devices

亞德諾亞德諾半導體技術(shù)有限公司

ADG904BCPZ-REEL

Wideband2.5GHz,37dBIsolationat1GHz,CMOS1.65Vto2.75V,4:1Mux/SP4T

GENERALDESCRIPTION TheADG904andADG904-Rarewidebandanalog4:1multiplexersthatuseaCMOSprocesstoprovidehighisolationandlowinsertionlossto1GHz.TheADG904isanabsorptive/matchedmuxwith50Ωterminatedshuntlegs;theADG904-Risareflectivemux.Thesedevicesaredesign

ADAnalog Devices

亞德諾亞德諾半導體技術(shù)有限公司

ADG904BCPZ-R-REEL

Wideband2.5GHz,37dBIsolationat1GHz,CMOS1.65Vto2.75V,4:1Mux/SP4T

GENERALDESCRIPTION TheADG904andADG904-Rarewidebandanalog4:1multiplexersthatuseaCMOSprocesstoprovidehighisolationandlowinsertionlossto1GHz.TheADG904isanabsorptive/matchedmuxwith50Ωterminatedshuntlegs;theADG904-Risareflectivemux.Thesedevicesaredesign

ADAnalog Devices

亞德諾亞德諾半導體技術(shù)有限公司

ADG904BRU

Wideband,37dBIsolationat1GHz,CMOS1.65Vto2.75V,4:1Mux/SP4T

GENERALDESCRIPTION TheADG904andADG904-Rarewidebandanalog4:1multiplexersthatuseaCMOSprocesstoprovidehighisolationandlowinsertionlossto1GHz.TheADG904isanabsorptive/matchedmuxwith50Ωterminatedshuntlegs;theADG904-Risareflectivemux.Thesedevicesaredesign

ADAnalog Devices

亞德諾亞德諾半導體技術(shù)有限公司

ADG904BRU-R

Wideband,37dBIsolationat1GHz,CMOS1.65Vto2.75V,4:1Mux/SP4T

GENERALDESCRIPTION TheADG904andADG904-Rarewidebandanalog4:1multiplexersthatuseaCMOSprocesstoprovidehighisolationandlowinsertionlossto1GHz.TheADG904isanabsorptive/matchedmuxwith50Ωterminatedshuntlegs;theADG904-Risareflectivemux.Thesedevicesaredesign

ADAnalog Devices

亞德諾亞德諾半導體技術(shù)有限公司

ADG904BRU-REEL

Wideband,37dBIsolationat1GHz,CMOS1.65Vto2.75V,4:1Mux/SP4T

GENERALDESCRIPTION TheADG904andADG904-Rarewidebandanalog4:1multiplexersthatuseaCMOSprocesstoprovidehighisolationandlowinsertionlossto1GHz.TheADG904isanabsorptive/matchedmuxwith50Ωterminatedshuntlegs;theADG904-Risareflectivemux.Thesedevicesaredesign

ADAnalog Devices

亞德諾亞德諾半導體技術(shù)有限公司

ADG904BRU-R-REEL

Wideband,37dBIsolationat1GHz,CMOS1.65Vto2.75V,4:1Mux/SP4T

GENERALDESCRIPTION TheADG904andADG904-Rarewidebandanalog4:1multiplexersthatuseaCMOSprocesstoprovidehighisolationandlowinsertionlossto1GHz.TheADG904isanabsorptive/matchedmuxwith50Ωterminatedshuntlegs;theADG904-Risareflectivemux.Thesedevicesaredesign

ADAnalog Devices

亞德諾亞德諾半導體技術(shù)有限公司

ADG904BRUZ

Wideband2.5GHz,37dBIsolationat1GHz,CMOS1.65Vto2.75V,4:1Mux/SP4T

GENERALDESCRIPTION TheADG904andADG904-Rarewidebandanalog4:1multiplexersthatuseaCMOSprocesstoprovidehighisolationandlowinsertionlossto1GHz.TheADG904isanabsorptive/matchedmuxwith50Ωterminatedshuntlegs;theADG904-Risareflectivemux.Thesedevicesaredesign

ADAnalog Devices

亞德諾亞德諾半導體技術(shù)有限公司

ADG904BRUZ-R

Wideband2.5GHz,37dBIsolationat1GHz,CMOS1.65Vto2.75V,4:1Mux/SP4T

GENERALDESCRIPTION TheADG904andADG904-Rarewidebandanalog4:1multiplexersthatuseaCMOSprocesstoprovidehighisolationandlowinsertionlossto1GHz.TheADG904isanabsorptive/matchedmuxwith50Ωterminatedshuntlegs;theADG904-Risareflectivemux.Thesedevicesaredesign

ADAnalog Devices

亞德諾亞德諾半導體技術(shù)有限公司

ADG904-R

Wideband,37dBIsolationat1GHz,CMOS1.65Vto2.75V,4:1Mux/SP4T

GENERALDESCRIPTION TheADG904andADG904-Rarewidebandanalog4:1multiplexersthatuseaCMOSprocesstoprovidehighisolationandlowinsertionlossto1GHz.TheADG904isanabsorptive/matchedmuxwith50Ωterminatedshuntlegs;theADG904-Risareflectivemux.Thesedevicesaredesign

ADAnalog Devices

亞德諾亞德諾半導體技術(shù)有限公司

ADG904-R

IFBand-PassFilterBankSwitchingNetworkforWirelessInfrastructure

ADAnalog Devices

亞德諾亞德諾半導體技術(shù)有限公司

ADRV904X-HB/PCBZ

8T8RSoCwithDFE,400MHziBWRFTransceiver

FEATURES ?Eightdifferentialtransmitters(Tx) ?Eightdifferentialreceivers(Rx) ?Twodifferentialobservationreceivers(ORx) ?Tunablerange:600MHzto6000MHz ?Single-bandandMultiband(Nx2T2R/4T4R)capability ?Fourindividualbandprofileswithintunablerange(bandprofiles

ADAnalog Devices

亞德諾亞德諾半導體技術(shù)有限公司

ADRV904X-LB/PCBZ

8T8RSoCwithDFE,400MHziBWRFTransceiver

FEATURES ?Eightdifferentialtransmitters(Tx) ?Eightdifferentialreceivers(Rx) ?Twodifferentialobservationreceivers(ORx) ?Tunablerange:600MHzto6000MHz ?Single-bandandMultiband(Nx2T2R/4T4R)capability ?Fourindividualbandprofileswithintunablerange(bandprofiles

ADAnalog Devices

亞德諾亞德諾半導體技術(shù)有限公司

ADRV904X-MB/PCBZ

8T8RSoCwithDFE,400MHziBWRFTransceiver

FEATURES ?Eightdifferentialtransmitters(Tx) ?Eightdifferentialreceivers(Rx) ?Twodifferentialobservationreceivers(ORx) ?Tunablerange:600MHzto6000MHz ?Single-bandandMultiband(Nx2T2R/4T4R)capability ?Fourindividualbandprofileswithintunablerange(bandprofiles

ADAnalog Devices

亞德諾亞德諾半導體技術(shù)有限公司

AN904

MAGNETICAMPLIFIERWITHLPR30CONTROLLER

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

APT904RAN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=3.9A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

APT904RBN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=4.4A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

APT904RCN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=3.6A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

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