98AON13451G中文資料安森美半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

Description

The CNY17XM, CNY17FXM, and MOC8106M devices consist of

a gallium arsenide infrared emitting diode coupled with an NPN

phototransistor in a dual in?line package.

Features

? High BVCEO: 70 V Minimum

(CNY17XM, CNY17FXM, MOC8106M)

? Closely Matched Current Transfer Ratio (CTR) Minimizes

Unit?to?Unit Variation

? Current Transfer Ratio In Select Groups

? Very Low Coupled Capacitance Along With

No Chip?to?Pin 6 Base Connection for Minimum Noise

Susceptibility (CNY17FXM, MOC8106M)

? Safety and Regulatory Approvals:

? UL1577, 4,170 VACRMS for 1 Minute

? DIN?EN/IEC60747?5?5, 850 V Peak Working Insulation Voltage

Applications

? Power Supply Regulators

? Digital Logic Inputs

? Microprocessor Inputs

? Appliance Sensor Systems

? Industrial Controls