首頁 >9N08DC>規(guī)格書列表

零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

CDA9N08-G

SteeringDiodeArrays-ESDSuppressors

Features ?(16kV)IEC61000-4-2capable ?FastReverseRecoveryTime ?FastTurnonTime ?LowCapacitance ?SMDPackages Applications ?SignalTermination ?SignalConditioning ?ESDSuppression ?TransientSuppression

COMCHIPComchip Technology

典琦典琦科技股份有限公司

FQB9N08

80VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstanda

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQB9N08

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=9.3A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.21Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQB9N08L

80VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQD9N08

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=7.4A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.21Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQD9N08

80VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstanda

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQD9N08

80VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstand

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQD9N08L

80VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstand

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQI9N08

80VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstanda

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQI9N08L

80VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQP9N08

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=9.3A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.21Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQP9N08

80VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstanda

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQP9N08L

80VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstand

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQPF9N08

80VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstanda

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQPF9N08

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=7A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.21Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQPF9N08L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=7A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.21Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQPF9N08L

80VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstand

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQU9N08

80VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstanda

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQU9N08

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=9.3A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.21Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQU9N08L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=7.4A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.21Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

供應商型號品牌批號封裝庫存備注價格
FSC
24+
CDIP14
5000
全現(xiàn)原裝公司現(xiàn)貨
詢價
FAIRCHILD/仙童
23+
CDIP14
5000
原廠授權代理,海外優(yōu)勢訂貨渠道??商峁┐罅繋齑?詳
詢價
12+
TO-252
15000
全新原裝,絕對正品,公司現(xiàn)貨供應。
詢價
NULL
23+
TO-252
6000
專業(yè)優(yōu)勢供應
詢價
2020+
TO252
16800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
詢價
UTC友順
24+
TO-220
32560
16年現(xiàn)貨供應商UTC友順代理批量的來
詢價
UTC/友順
24+
TO247
100000
原裝現(xiàn)貨
詢價
UTC/友順
2022+
TO-247
50000
原廠代理 終端免費提供樣品
詢價
UTC/友順
2022+
TO-247
30000
進口原裝現(xiàn)貨供應,原裝 假一罰十
詢價
UTC
20232024
TO247
6000
老牌代理,長期現(xiàn)貨
詢價
更多9N08DC供應商 更新時間2024-10-23 10:20:00