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A5G26H605W19N中文資料恩智浦?jǐn)?shù)據(jù)手冊PDF規(guī)格書

A5G26H605W19N
廠商型號

A5G26H605W19N

功能描述

Airfast RF Power GaN Transistor

文件大小

491.07 Kbytes

頁面數(shù)量

15

生產(chǎn)廠商 NXP Semiconductors
企業(yè)簡稱

nxp恩智浦

中文名稱

恩智浦半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-2-14 12:29:00

A5G26H605W19N規(guī)格書詳情

1 General description

This 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1930 to 1995 MHz.

This part is characterized and performance is guaranteed for applications operating in the 1930 to 1995 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.

2 Features and benefits

? High terminal impedances for optimal broadband performance

? Advanced high performance in-package Doherty

? Improved linearized error vector magnitude with next generation signal

? Able to withstand extremely high output VSWR and broadband operating conditions

? Plastic package

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