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A5G35H120N分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料

A5G35H120N
廠商型號(hào)

A5G35H120N

參數(shù)屬性

A5G35H120N 封裝/外殼為10-PowerLDFN;包裝為散裝;類別為分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻;產(chǎn)品描述:AIRFAST RF POWER GAN TRANSISTOR,

功能描述

Airfast RF Power GaN Transistor

封裝外殼

10-PowerLDFN

文件大小

198.15 Kbytes

頁(yè)面數(shù)量

11 頁(yè)

生產(chǎn)廠商 NXP Semiconductors
企業(yè)簡(jiǎn)稱

nxp恩智浦

中文名稱

恩智浦半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

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更新時(shí)間

2025-1-20 15:08:00

A5G35H120N規(guī)格書詳情

This 18 W asymmetrical Doherty RF power GaN transistor is designed for

cellular base station applications requiring very wide instantaneous bandwidth

capability covering the frequency range of 3300 to 3700 MHz.

This part is characterized and performance is guaranteed for applications

operating in the 3300 to 3700 MHz band. There is no guarantee of performance

when this part is used in applications designed outside of these frequencies.

Features

? High terminal impedances for optimal broadband performance

? Improved linearized error vector magnitude with next generation signal

? Able to withstand extremely high output VSWR and broadband operating

conditions

? Designed for low complexity linearization systems

? Optimized for massive MIMO active antenna systems for 5G base stations

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    A5G35H120NT2

  • 制造商:

    NXP USA Inc.

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - FET,MOSFET - 射頻

  • 包裝:

    散裝

  • 頻率:

    3.3GHz ~ 3.7GHz

  • 增益:

    14.1dB

  • 功率 - 輸出:

    18W

  • 封裝/外殼:

    10-PowerLDFN

  • 供應(yīng)商器件封裝:

    10-DFN(7x10)

  • 描述:

    AIRFAST RF POWER GAN TRANSISTOR,

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