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首頁 >AD6426XB>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
AD6426XB	文件：506.45 Kbytes Page：50 Pages	Enhanced GSM Processor GENERALDESCRIPTION TheAD6426EnhancedGSMProcessor(EGSMP)isthecentralcomponentofthehighlyintegratedAD20msp425GSMChipset.Offeringalowtotalchipcount,lowbillofmaterialscostandlongtalkandstandbytimes,thechipsetoffersdesignersastraightforwardroutetoahighlyco	ADAnalog Devices 亞德諾亞德諾半導(dǎo)體技術(shù)有限公司	AD
AD6426XST	文件：506.45 Kbytes Page：50 Pages	EnhancedGSMProcessor GENERALDESCRIPTION TheAD6426EnhancedGSMProcessor(EGSMP)isthecentralcomponentofthehighlyintegratedAD20msp425GSMChipset.Offeringalowtotalchipcount,lowbillofmaterialscostandlongtalkandstandbytimes,thechipsetoffersdesignersastraightforwardroutetoahighlyco	ADAnalog Devices 亞德諾亞德諾半導(dǎo)體技術(shù)有限公司	AD
AN6426NK	文件：127.84 Kbytes Page：9 Pages	Hands-freeSpeechNetworkIC ■Features ?Incorporatesallthefunctionsrequiredofahands-free telephone. ?Incorporatesallthefunctionsrequiredofahandset. ?ComplieswithACandDCimpedancerequirements. ?Providesawidedynamicrange. ?Anoisedetectingcircuitpreventsinadvertenttransmission. ?Operati	PanasonicPanasonic Semiconductor 松下松下電器	Panasonic
AON6426	文件：112.42 Kbytes Page：1 Pages	DFN5X6PACKAGEMARKINGDESCRIPTION	AOSMDAlpha & Omega Semiconductors 萬國半導(dǎo)體美國萬國半導(dǎo)體	AOSMD
AON6426L	文件：139.05 Kbytes Page：6 Pages	N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAON6426LcombinesadvancedtrenchMOSFETtechnologywithalowresistancepackagetoprovideextremelylowRDS(ON).Thisdeviceisidealforloadswitchandbatteryprotectionapplications. -RoHSCompliant -HalogenFree Features VDS(V)=30V ID=24A(VGS=	AOSMDAlpha & Omega Semiconductors 萬國半導(dǎo)體美國萬國半導(dǎo)體	AOSMD
AON6426L	文件：112.42 Kbytes Page：1 Pages	DFN5X6PACKAGEMARKINGDESCRIPTION	AOSMDAlpha & Omega Semiconductors 萬國半導(dǎo)體美國萬國半導(dǎo)體	AOSMD
CEA6426	文件：620.68 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,4.6A,RDS(ON)=90mW@VGS=10V. RDS(ON)=110mW@VGS=4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-89package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEA6426	文件：1.77573 Mbytes Page：8 Pages	N-Channel0-V(D-S)MOSFET FEATURES ?Halogen-free ?TrenchFET?PowerMOSFET APPLICATIONS ?LoadSwitchesforPortableDevices	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司	VBSEMI
CEA6426	文件：417.25 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,3A,RDS(ON)=90mΩ@VGS=10V. RDS(ON)=110mΩ@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-89package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEB6426	文件：407.84 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,17A,RDS(ON)=66mΩ@VGS=10V. RDS(ON)=85mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CED6426	文件：351.46 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,16A,RDS(ON)=66mΩ@VGS=10V. RDS(ON)=85mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CED6426	文件：451.96 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,16A,RDS(ON)=66mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS( Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=85mW@VGS=4.5V. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEM6426	文件：600.94 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,4.7A,RDS(ON)=66mW@VGS=10V. RDS(ON)=85mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEM6426	文件：415.57 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,4.7A,RDS(ON)=66mΩ@VGS=10V. RDS(ON)=85mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEP6426	文件：407.84 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,17A,RDS(ON)=66mΩ@VGS=10V. RDS(ON)=85mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CET6426	文件：409.86 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,4.5A,RDS(ON)=90mΩ@VGS=10V. RDS(ON)=110mΩ@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-223package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEU6426	文件：451.96 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,16A,RDS(ON)=66mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS( Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=85mW@VGS=4.5V. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEU6426	文件：351.46 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,16A,RDS(ON)=66mΩ@VGS=10V. RDS(ON)=85mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEU6426	文件：425.79 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,34A,RDS(ON)=25mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CHM6426JPT	文件：260.56 Kbytes Page：2 Pages	N-ChannelEnhancementModeFieldEffectTransistor VOLTAGE60VoltsCURRENT4.7Ampere FEATURE Smallflatpackage.(SO-8) SuperHighdensitycelldesignforextremelylowRDS(ON). Highsaturationcurrentcapability. APPLICATION Servomotorcontrol. PowerMOSFETgatedrivers. Otherswitchingapplications.	CHENMKOchenmko 力勤股份有限公司	CHENMKO

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詳細參數(shù)

型號：
AD6426XB
制造商：
AD
制造商全稱：
Analog Devices
功能描述：
Enhanced GSM Processor

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市永貝爾科技有限公司	AD6426XB	AD	23+	原廠原包	19960	只做進口原裝終端工廠免費送樣	詢價
深圳市力拓輝電子有限公司	AD6426XCA		22+		5000		詢價
深圳市一線半導(dǎo)體有限公司	AD6426XST	AD	24+	TQFP-144	2630		詢價
深圳市壹芯創(chuàng)科技有限公司	AD6426XST	AD	22+	TQFP-144	8200	全新原裝現(xiàn)貨!自家?guī)齑?	詢價
深圳市佳鑫美電子科技有限公司	AD6426XST	AD	24+	TQFP-144	2987	只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電!	詢價
深圳市芯福林電子科技有限公司	AD6426XST	ADI/亞德諾	21+	原封裝	13880	公司只售原裝,支持實單	詢價
貿(mào)澤芯城（深圳）電子科技有限公司	AD6426XST	ADI/亞德諾	23+	QFP-100	5000	原廠授權(quán)代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳	詢價
博速半導(dǎo)體（深圳）有限公司	AD6426XST	ADI/亞德諾	22+		66900	原封裝	詢價
深圳市宏世佳電子科技有限公司	AD6426XST	AD	2023+	TQFP-144	4675	全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售	詢價
深圳市藍山航業(yè)科技有限公司	AD6427BS	AD	24+	QFP	500000	行業(yè)低價,代理渠道	詢價

更多AD6426XB供應(yīng)商更新時間2024-12-23 8:00:00

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