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AIMBG120R020M1

Final datasheet CoolSiC? 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET

Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=104AatTC=25°C ?RDS(on)=19mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*A ?Bestinclassswitchingenergyforlowerswitchinglossesandreducedcoolingefforts ?Lowestde

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIMCQ120R020M1T

CoolSiC?AutomotiveMOSFET1200VinHDSOP-22-3package

Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=116AatTC=25°C ?RDS(on)=19mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*A ?Bestinclassswitchingenergyforlowerswitchinglossesandreducedcoolingefforts ?Lowestde

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIMZH120R020M1T

CoolSiC?1200VSiCTrenchMOSFET

Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=100AatTC=25°C ?RDS(on)=19mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*AFOM ?Increasedrecommendedturn-onvoltage(VGS(on)=20V)forlowerRDS(on) ?Bestinclassswit

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIMZHN120R020M1T

CoolSiC?1200VSiCTrenchMOSFET

Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=100AatTC=25°C ?RDS(on)=19mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*AFOM ?Increasedrecommendedturn-onvoltage(VGS(on)=20V)forlowerRDS(on) ?Bestinclassswit

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMW120R020M1H

CoolSiC??1200VSiCTrenchMOSFET:siliconcarbideMOSFET

Features ?VDSS=1200VatTvj=25°C ?IDCC=98AatTvj=25°C ?RDS(on)=19mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?Shortcircuitwithstandtime3μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparasiticturnon,0Vturn-offgatevoltageca

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMW120R020M1H

SiCN-ChannelMOSFET

FEATURES ·HighBlockingVoltagewithLowOn-Resistance ·RDS(on)=19mΩ（TYP.）@VGS=18VTj=25℃ ·Verylowswitchinglosses APPLICATIONS ·Solarpoweroptimizer ·OnlineUPS/IndustrialUP ·DC-DCConverters ·Stringinverters

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IMZA120R020M1H

2ED314xMC12L(2ED-X3Compact)Dual-channelisolatedgatedriverICwithdead-timecontrol

Features ?Dual-channelisolatedgatedriver ?Forusewith600V/650V/1200V/1700V/2300VIGBTs,SiandSiCMOSFETs ?Upto6.5Atypicalpeakoutputcurrent ?39nspropagationdelaywith5nschannel-to-channeldelaymismatch(skew) ?35Vabsolutemaximumoutputsupplyvoltage ?Highc

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMZA120R020M1H

CoolSiC??1200VSiCTrenchMOSFET:SiliconCarbideMOSFETwith.XTinterconnectiontechnology

Features ?VDSS=1200VatTvj=25°C ?IDCC=98AatTvj=25°C ?RDS(on)=19mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?Shortcircuitwithstandtime3μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparasiticturnon,0Vturn-offgatevoltageca

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

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Advantech
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更多AIMBG120R020M1供應商 更新時間2024-12-25 18:24:00

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