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AIMZHN120R020M1T

CoolSiC? 1200 V SiC Trench MOSFET

Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=100AatTC=25°C ?RDS(on)=19mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*AFOM ?Increasedrecommendedturn-onvoltage(VGS(on)=20V)forlowerRDS(on) ?Bestinclassswit

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIMBG120R020M1

FinaldatasheetCoolSiC?1200VSiCTrenchMOSFET:SiliconCarbideMOSFET

Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=104AatTC=25°C ?RDS(on)=19mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*A ?Bestinclassswitchingenergyforlowerswitchinglossesandreducedcoolingefforts ?Lowestde

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIMCQ120R020M1T

CoolSiC?AutomotiveMOSFET1200VinHDSOP-22-3package

Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=116AatTC=25°C ?RDS(on)=19mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*A ?Bestinclassswitchingenergyforlowerswitchinglossesandreducedcoolingefforts ?Lowestde

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIMZH120R020M1T

CoolSiC?1200VSiCTrenchMOSFET

Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=100AatTC=25°C ?RDS(on)=19mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*AFOM ?Increasedrecommendedturn-onvoltage(VGS(on)=20V)forlowerRDS(on) ?Bestinclassswit

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMW120R020M1H

SiCN-ChannelMOSFET

FEATURES ·HighBlockingVoltagewithLowOn-Resistance ·RDS(on)=19mΩ（TYP.）@VGS=18VTj=25℃ ·Verylowswitchinglosses APPLICATIONS ·Solarpoweroptimizer ·OnlineUPS/IndustrialUP ·DC-DCConverters ·Stringinverters

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IMW120R020M1H

CoolSiC??1200VSiCTrenchMOSFET:siliconcarbideMOSFET

Features ?VDSS=1200VatTvj=25°C ?IDCC=98AatTvj=25°C ?RDS(on)=19mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?Shortcircuitwithstandtime3μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparasiticturnon,0Vturn-offgatevoltageca

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMZA120R020M1H

2ED314xMC12L(2ED-X3Compact)Dual-channelisolatedgatedriverICwithdead-timecontrol

Features ?Dual-channelisolatedgatedriver ?Forusewith600V/650V/1200V/1700V/2300VIGBTs,SiandSiCMOSFETs ?Upto6.5Atypicalpeakoutputcurrent ?39nspropagationdelaywith5nschannel-to-channeldelaymismatch(skew) ?35Vabsolutemaximumoutputsupplyvoltage ?Highc

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMZA120R020M1H

CoolSiC??1200VSiCTrenchMOSFET:SiliconCarbideMOSFETwith.XTinterconnectiontechnology

Features ?VDSS=1200VatTvj=25°C ?IDCC=98AatTvj=25°C ?RDS(on)=19mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?Shortcircuitwithstandtime3μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparasiticturnon,0Vturn-offgatevoltageca

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

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Infineon
23+
PG-TO247-4
15500
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TI/德州儀器
MSOP10
6698
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N/A
22+
NA
8200
原裝現(xiàn)貨庫(kù)存.價(jià)格優(yōu)勢(shì)!!
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OAKTREE
06+
SOP16
1000
普通
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OAKTREE
23+
SOP16
90000
一定原裝正品
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OAKTREE
1701+
SOP16
6500
只做原裝進(jìn)口,假一罰十
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AI-LINK
23+
SMD
50000
只做原裝正品
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SHA
05+
原廠原裝
551
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
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SHA
24+
6980
原裝現(xiàn)貨,可開(kāi)13%稅票
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Phoenix/菲尼克斯
23/24+
1411268
4886
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更多AIMZHN120R020M1T供應(yīng)商 更新時(shí)間2024-12-25 9:02:00

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