首頁(yè) >AIMZHN120R040M1T>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
AIMZHN120R040M1T | CoolSiC? 1200 V SiC Trench MOSFET Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=55AatTC=25°C ?RDS(on)=40mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*AFOM ?Increasedrecommendedturn-onvoltage(VGS(on)=20V)forlowerRDS(on) ?Bestinclassswitc | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
CoolSiC?1200VSiCTrenchMOSFET Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=54AatTC=25°C ?RDS(on)=40mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*AFOM ?Bestinclassswitchingenergyforlowerswitchinglossesandreducedcoolingefforts ?Lowes | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolSiC?AutomotiveMOSFET1200VinHDSOP-22-3package Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=61AatTC=25°C ?RDS(on)=40mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*A ?Bestinclassswitchingenergyforlowerswitchinglossesandreducedcoolingefforts ?Lowestdev | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolSiC?1200VSiCTrenchMOSFET Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=55AatTC=25°C ?RDS(on)=40mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*AFOM ?Increasedrecommendedturn-onvoltage(VGS(on)=20V)forlowerRDS(on) ?Bestinclassswitc | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolSiC??1200VSiCTrenchMOSFET:siliconcarbideMOSFET Features ?VDSS=1200VatTvj=25°C ?IDCC=55AatTvj=25°C ?RDS(on)=39mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?Shortcircuitwithstandtime3μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparasiticturnon,0Vturn-offgatevoltageca | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolSiC??1200VSiCTrenchMOSFET:SiliconCarbideMOSFETwith.XTinterconnectiontechnology Features ?VDSS=1200VatTvj=25°C ?IDCC=55AatTvj=25°C ?RDS(on)=39mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?Shortcircuitwithstandtime3μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparasiticturnon,0Vturn-offgatevoltageca | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
EiceDRIVER?1ED314xMU12F(1ED-X3Compact) Features ?Single-channelisolatedgatedriver ?Forusewith600V/650V/1200V/1700V/2300VIGBTs,SiandSiCMOSFETs ?Upto6.5Atypicalpeakoutputcurrent ?45nspropagationdelaywith7nspart-to-partmatching(skew) ?35Vabsolutemaximumoutputsupplyvoltage ?Highcommon-mode | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Infineon |
23+ |
PG-TO247-4 |
15500 |
英飛凌優(yōu)勢(shì)渠道全系列在售 |
詢(xún)價(jià) | ||
TI/德州儀器 |
MSOP10 |
6698 |
詢(xún)價(jià) | ||||
N/A |
22+ |
NA |
8200 |
原裝現(xiàn)貨庫(kù)存.價(jià)格優(yōu)勢(shì)!! |
詢(xún)價(jià) | ||
OAKTREE |
06+ |
SOP16 |
1000 |
普通 |
詢(xún)價(jià) | ||
OAKTREE |
23+ |
SOP16 |
90000 |
一定原裝正品 |
詢(xún)價(jià) | ||
OAKTREE |
1701+ |
SOP16 |
6500 |
只做原裝進(jìn)口,假一罰十 |
詢(xún)價(jià) | ||
AI-LINK |
23+ |
SMD |
50000 |
只做原裝正品 |
詢(xún)價(jià) | ||
SHA |
05+ |
原廠(chǎng)原裝 |
551 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢(xún)價(jià) | ||
SHA |
24+ |
6980 |
原裝現(xiàn)貨,可開(kāi)13%稅票 |
詢(xún)價(jià) | |||
Phoenix/菲尼克斯 |
23/24+ |
1411268 |
4886 |
優(yōu)勢(shì)特價(jià) 原裝正品 全產(chǎn)品線(xiàn)技術(shù)支持 |
詢(xún)價(jià) |
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