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IMZA120R040M1H

EiceDRIVER? 1ED314xMU12F (1ED-X3 Compact)

Features ?Single-channelisolatedgatedriver ?Forusewith600V/650V/1200V/1700V/2300VIGBTs,SiandSiCMOSFETs ?Upto6.5Atypicalpeakoutputcurrent ?45nspropagationdelaywith7nspart-to-partmatching(skew) ?35Vabsolutemaximumoutputsupplyvoltage ?Highcommon-mode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMZA120R040M1H

CoolSiC??1200 V SiC Trench MOSFET : Silicon Carbide MOSFET with .XT interconnection technology

Features ?VDSS=1200VatTvj=25°C ?IDCC=55AatTvj=25°C ?RDS(on)=39mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?Shortcircuitwithstandtime3μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparasiticturnon,0Vturn-offgatevoltageca

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIMBG120R040M1

CoolSiC?1200VSiCTrenchMOSFET

Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=54AatTC=25°C ?RDS(on)=40mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*AFOM ?Bestinclassswitchingenergyforlowerswitchinglossesandreducedcoolingefforts ?Lowes

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIMCQ120R040M1T

CoolSiC?AutomotiveMOSFET1200VinHDSOP-22-3package

Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=61AatTC=25°C ?RDS(on)=40mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*A ?Bestinclassswitchingenergyforlowerswitchinglossesandreducedcoolingefforts ?Lowestdev

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIMZH120R040M1T

CoolSiC?1200VSiCTrenchMOSFET

Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=55AatTC=25°C ?RDS(on)=40mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*AFOM ?Increasedrecommendedturn-onvoltage(VGS(on)=20V)forlowerRDS(on) ?Bestinclassswitc

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIMZHN120R040M1T

CoolSiC?1200VSiCTrenchMOSFET

Features ?VDSS=1200VatTvj=-55...175°C ?IDDC=55AatTC=25°C ?RDS(on)=40mΩatVGS=20V,Tvj=25°C ?Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*AFOM ?Increasedrecommendedturn-onvoltage(VGS(on)=20V)forlowerRDS(on) ?Bestinclassswitc

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMW120R040M1H

CoolSiC??1200VSiCTrenchMOSFET:siliconcarbideMOSFET

Features ?VDSS=1200VatTvj=25°C ?IDCC=55AatTvj=25°C ?RDS(on)=39mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?Shortcircuitwithstandtime3μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparasiticturnon,0Vturn-offgatevoltageca

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

供應(yīng)商型號品牌批號封裝庫存備注價格
Infineon
24+
N/A
5000
代理渠道/只做原裝/可含稅
 詢價
INFINEON
23+
PG-TO247-4
14253
原包裝原標(biāo)現(xiàn)貨,假一罰十,
 詢價
INFINEON/英飛凌場效應(yīng)管
24+23+
TO-247
12580
16年現(xiàn)貨庫存供應(yīng)商終端BOM表可配單提供樣品
 詢價
Infineon
23+
PG-TO247-4
15500
英飛凌優(yōu)勢渠道全系列在售
 詢價
INFINEON
2023
NA
2580
原廠代理渠道,正品保障
 詢價
Infineon Technologies
23+
SMD
3652
原廠正品現(xiàn)貨供應(yīng)SIC全系列
 詢價
Infineon(英飛凌)
2324+
NA
78920
二十余載金牌老企,研究所優(yōu)秀合供單位,您的原廠窗口
 詢價
INFINEON
22+
NA
1206
原裝正品支持實(shí)單
 詢價
Infineon
205
只做正品
 詢價
Infineon(英飛凌)
21+
N/A
5464
全新原裝虧本出
 詢價
更多IMZA120R040M1H供應(yīng)商 更新時間2024-10-17 14:35:00

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