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MBR360T3

SurfaceMountSchottkyPowerRectifier

SCHOTTKYBARRIERRECTIFIERS3.0AMPERES20,30,40VOLTS ThesedevicesemploytheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,hi

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MBRAF360T3G

SurfaceMountSchottkyPowerRectifier

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBRAF360T3G

SurfaceMountSchottkyPowerRectifier

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBRS360T3

SCHOTTKYBARRIERRECTIFIERS

SCHOTTKYBARRIERRECTIFIERS3.0AMPERES20,30,40VOLTS ThesedevicesemploytheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,hi

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBRS360T3G

SurfaceMountSchottkyPowerRectifier

ThisdeviceemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures epitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,highfrequencyrectification,or asfreewheelingandpol

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBRS360T3G

SurfaceMountSchottkyPowerRectifier

ThisdeviceemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures epitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,highfrequencyrectification,or asfreewheelingandpol

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBRS360T3G

SurfaceMountSchottkyPowerRectifier

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBRS360T3G

SCHOTTKYBARRIERRECTIFIERS3.0AMPERES,60VOLTS

SCHOTTKYBARRIERRECTIFIERS3.0AMPERES,60VOLTS ThisdeviceemploystheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,hi

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MURS360T3

SurfaceMountUltrafastPowerRectifiers

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MURS360T3

ULTRAFASTRECTIFIERS3.0AMPERES200-600VOLTS

SurfaceMountUltrafastPowerRectifiers ...employingstate–of–the–artepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforhighvoltage,highfrequencyrectification,orasfreewheelingandprotectiondiodes,insurfacemountapplicationswherecompact

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MURS360T3G

SurfaceMountUltrafastPowerRectifiers

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MURS360T3G

PowerRectifiers,Ultra-fastRecovery

Thisseriesemploysthestate?of?the?artepitaxialconstructionwith oxidepassivationandmetaloverlaycontact.Ideallysuitedforhigh voltage,highfrequencyrectification,orasfreewheelingand protectiondiodes,insurfacemountapplicationswherecompactsize andweightarecriticalt

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MURS360T3G

SurfaceMountUltrafastPowerRectifiers

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NRTSAF360T3G

Trench-basedSchottkyRectifier

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NRVBAF360T3G

SurfaceMountSchottkyPowerRectifier

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NRVBS360T3G

SurfaceMountSchottkyPowerRectifier

ThisdeviceemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures epitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,highfrequencyrectification,or asfreewheelingandpol

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NRVBS360T3G

SurfaceMountSchottkyPowerRectifier

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NRVBS360T3G

SurfaceMountSchottkyPowerRectifier

ThisdeviceemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures epitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,highfrequencyrectification,or asfreewheelingandpol

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NRVBS360T3G

SCHOTTKYBARRIERRECTIFIERS3.0AMPERES,60VOLTS

SCHOTTKYBARRIERRECTIFIERS3.0AMPERES,60VOLTS ThisdeviceemploystheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,hi

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NRVTSAF360T3G

Trench-basedSchottkyRectifier

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

供應(yīng)商型號品牌批號封裝庫存備注價格
OnSemiconductor
22+
NA
30000
100%全新原裝 假一賠十
詢價
Mpression
24+
SMD
17900
可編程邏輯IC開發(fā)工具
詢價
NAUTILUS
24+
69
原裝現(xiàn)貨假一賠十
詢價
NAUTILUS
22+
N/A
354000
詢價
NAUTILUS
23+
19
6500
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價
NAUTILUS
23+
19
6500
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價
HTM SENSORS
24+
con
2500
優(yōu)勢庫存,原裝正品
詢價
STM
2016+
SOP
6528
只做原裝正品現(xiàn)貨!或訂貨!假一賠十!
詢價
STM
SOP
6688
15
現(xiàn)貨庫存
詢價
ST/意法
23+
SOP
8160
原廠原裝
詢價
更多ALTMURS360T3G供應(yīng)商 更新時間2025-1-3 11:30:00