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AM29LV400BT70RFIB

4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半導(dǎo)體美國超威半導(dǎo)體公司

AM29LV400BT70RSC

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半導(dǎo)體美國超威半導(dǎo)體公司

AM29LV400BT70RSCB

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半導(dǎo)體美國超威半導(dǎo)體公司

AM29LV400BT70RSE

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半導(dǎo)體美國超威半導(dǎo)體公司

AM29LV400BT70RSEB

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半導(dǎo)體美國超威半導(dǎo)體公司

AM29LV400BT70RSI

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半導(dǎo)體美國超威半導(dǎo)體公司

AM29LV400BT70RSIB

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半導(dǎo)體美國超威半導(dǎo)體公司

AM29LV400BT70RWAC

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半導(dǎo)體美國超威半導(dǎo)體公司

AM29LV400BT70RWACB

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半導(dǎo)體美國超威半導(dǎo)體公司

AM29LV400BT70RWAE

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半導(dǎo)體美國超威半導(dǎo)體公司

AM29LV400BT70RWAEB

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半導(dǎo)體美國超威半導(dǎo)體公司

AM29LV400BT70RWAI

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半導(dǎo)體美國超威半導(dǎo)體公司

AM29LV400BT70RWAIB

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半導(dǎo)體美國超威半導(dǎo)體公司

HY29LV400BT70

4Mbit(512Kx8/256Kx16)LowVoltageFlashMemory

HynixHynix Semiconductor

SK海力士海力士半導(dǎo)體

HY29LV400BT70I

4Mbit(512Kx8/256Kx16)LowVoltageFlashMemory

HynixHynix Semiconductor

SK海力士海力士半導(dǎo)體

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更多AM29LV400BT70RFIB供應(yīng)商 更新時(shí)間2024-11-16 9:55:00